The stability properties of injection-current profiled quantum dot lasers are analyzed for broad area devices of different length. In general, devices demonstrate stable output at low to moderate injection levels before the onset of filamentary dynamics at higher injection levels. By comparing devices of different lengths, the onset of filamentary dynamics is shown to coincide in each case with the onset of excited state lasing and so the loss in stability may be linked to the increased low frequency noise and phase-amplitude coupling that occurs in this regime. (c) 2007 Elsevier B.V. All rights reserved
This thesis focuses on laser diodes made of Quantum Dot/Quantum Dash (QD) structures. These devices ...
In recent years, quantum-dot (QD) semiconductor lasers attract significant interest in many practica...
1.3 μm quantum dot (QD) lasers epitaxially grown on silicon have attracted great interest as light s...
The stability properties of injection-current profiled quantum dot lasers are analyzed for broad are...
The impact of injection current profiling on the spatial mode structure of quantum dot semiconductor...
In this paper we investigate and explore the stability and operating regime of modelocking (ML) in 4...
We report on a significant reduction of both the radiofrequency beat note line width at 40.7 GHz and...
Quantum dot lasers are envisioned to be the next generation of optical transmitters used for short-r...
We present the dynamics of quantum-dot passively mode-locked semiconductor lasers under optical inje...
The response of an optically injected quantum-dot semiconductor laser (SL) is studied both experimen...
We investigate numerically and experimentally the properties of a passively mode locked quantum dot ...
We study experimentally the dynamics of quantum-dot (QD) passively mode-locked semiconductor lasers ...
We have measured the gain peak energy of GaInAs quantum dot laser structures, relative to the absorp...
The unique electronic structure of quantum dot based semiconductor lasers leads to significant diffe...
The study of injection locking characteristics was performed on an InAs Quantum Dash (QDash) semicon...
This thesis focuses on laser diodes made of Quantum Dot/Quantum Dash (QD) structures. These devices ...
In recent years, quantum-dot (QD) semiconductor lasers attract significant interest in many practica...
1.3 μm quantum dot (QD) lasers epitaxially grown on silicon have attracted great interest as light s...
The stability properties of injection-current profiled quantum dot lasers are analyzed for broad are...
The impact of injection current profiling on the spatial mode structure of quantum dot semiconductor...
In this paper we investigate and explore the stability and operating regime of modelocking (ML) in 4...
We report on a significant reduction of both the radiofrequency beat note line width at 40.7 GHz and...
Quantum dot lasers are envisioned to be the next generation of optical transmitters used for short-r...
We present the dynamics of quantum-dot passively mode-locked semiconductor lasers under optical inje...
The response of an optically injected quantum-dot semiconductor laser (SL) is studied both experimen...
We investigate numerically and experimentally the properties of a passively mode locked quantum dot ...
We study experimentally the dynamics of quantum-dot (QD) passively mode-locked semiconductor lasers ...
We have measured the gain peak energy of GaInAs quantum dot laser structures, relative to the absorp...
The unique electronic structure of quantum dot based semiconductor lasers leads to significant diffe...
The study of injection locking characteristics was performed on an InAs Quantum Dash (QDash) semicon...
This thesis focuses on laser diodes made of Quantum Dot/Quantum Dash (QD) structures. These devices ...
In recent years, quantum-dot (QD) semiconductor lasers attract significant interest in many practica...
1.3 μm quantum dot (QD) lasers epitaxially grown on silicon have attracted great interest as light s...