We study the decrease of the ground-state output with increasing current in two-state quantum dot lasing. We show that the asymmetry in the thermal population redistribution breaks the symmetric dynamical evolution of the electron-hole pairs. This fully explains the transition from two-state to single-state lasing observed experimentally. The model also reproduces the temperature dependence of the two-state lasin
We have demonstrated a two-section dual-wavelength diode laser incorporating distributed Bragg refle...
We have used two- and three-pulse femtosecond differential transmission spectroscopy to study the de...
Temperature-dependent modulation characteristics of 1.3 mu m InAs/GaAs quantum dot (QD) lasers under...
We study the decrease of the ground-state output with increasing current in two-state quantum dot la...
The paper analyses theoretically the quenching of the ground state (GS) power observed in InAs/GaAs...
The elec. control of the lasing wavelength in two-section quantum dot lasers was studied. By changin...
The authors demonstrate simultaneous lasing at 2 well-sepd. wavelengths in self-assembled InAs quant...
This article may be downloaded for personal use only. Any other use requires prior permission of the...
We study InGaAs QD laser operating simultaneously at ground (GS) and excited (ES) states under 30ns ...
Self-assembled quantum dot structures used for lasers have shown significant variation in the dot si...
We describe the formation of a strong pulse asymmetry in mode-locked quantum-dot edge-emitting two-s...
We describe the formation of a strong pulse asymmetry in mode-locked quantum-dot edge-emitting two-s...
We explore the accessible wavelength range offered by InP/AlGaInP quantum dots (QD)s grown by metal–...
The impact of ground state amplification on the laser emission of In(Ga)As quantum dot excited state...
A turn on of a quantum dot (QD) semiconductor laser simultaneously operating at the ground state (GS...
We have demonstrated a two-section dual-wavelength diode laser incorporating distributed Bragg refle...
We have used two- and three-pulse femtosecond differential transmission spectroscopy to study the de...
Temperature-dependent modulation characteristics of 1.3 mu m InAs/GaAs quantum dot (QD) lasers under...
We study the decrease of the ground-state output with increasing current in two-state quantum dot la...
The paper analyses theoretically the quenching of the ground state (GS) power observed in InAs/GaAs...
The elec. control of the lasing wavelength in two-section quantum dot lasers was studied. By changin...
The authors demonstrate simultaneous lasing at 2 well-sepd. wavelengths in self-assembled InAs quant...
This article may be downloaded for personal use only. Any other use requires prior permission of the...
We study InGaAs QD laser operating simultaneously at ground (GS) and excited (ES) states under 30ns ...
Self-assembled quantum dot structures used for lasers have shown significant variation in the dot si...
We describe the formation of a strong pulse asymmetry in mode-locked quantum-dot edge-emitting two-s...
We describe the formation of a strong pulse asymmetry in mode-locked quantum-dot edge-emitting two-s...
We explore the accessible wavelength range offered by InP/AlGaInP quantum dots (QD)s grown by metal–...
The impact of ground state amplification on the laser emission of In(Ga)As quantum dot excited state...
A turn on of a quantum dot (QD) semiconductor laser simultaneously operating at the ground state (GS...
We have demonstrated a two-section dual-wavelength diode laser incorporating distributed Bragg refle...
We have used two- and three-pulse femtosecond differential transmission spectroscopy to study the de...
Temperature-dependent modulation characteristics of 1.3 mu m InAs/GaAs quantum dot (QD) lasers under...