447-455The modal gain characteristics along with optical losses theoretically within TE and TM polarization modes for GRIN-In0.90Ga0.10As0.59P0.41/InP lasing nano-heterostructure by taking into account the number of quantum wells as active layers inserted between barriers, have been investigated in the present paper. In addition, the behaviour of saturated modal gain, transparency current density and maximum optical loss for the single and multiple quantum wells based nano-heterostructures, has also been studied. Moreover, temperature and GRIN dependence of modal gain characteristics with in TE and TM mode have been studied. Under simulation, the anti-guiding factors (a substantial parameter for optical gain) along with modal gain...
This thesis is focused upon the experimental investigation of optical properties of InAs/InP NW hete...
textThe emission wavelength of a quantum well depends on the bandgap of quantum well and the barrie...
textThe emission wavelength of a quantum well depends on the bandgap of quantum well and the barrie...
This paper reports the effects of variation of number of quantum wells in material gain characterist...
This paper reports the effects of variation of number of quantum wells in material gain characterist...
This paper reports the effects of variation of number of quantum wells in material gain characterist...
This paper reports about the study of tunable anti-guiding factor and gain spectra of type-I GRIN (G...
This paper reports about the study of tunable anti-guiding factor and gain spectra of type-I GRIN (G...
GaSb-based type-I heterostructure exhibited low optical gain hence further investigations are needed...
Optical characterisation of InP/AlGaInP quantum dot laser structures, involving laser threshold and ...
A theoretical study of the polarization-independent optical gain using group V sublattice interdiffu...
Ce travail de thèse porte sur l’étude des propriétés optiques de nanofils InP et d’hétérostructures ...
International audienceWe have theoretically investigated the band structure engineering and optical ...
A type-II (with broken bandgap) W-shaped nano-heterostructure having layers combination of AlSb, InA...
This thesis is focused upon the experimental investigation of optical properties of InAs/InP NW hete...
This thesis is focused upon the experimental investigation of optical properties of InAs/InP NW hete...
textThe emission wavelength of a quantum well depends on the bandgap of quantum well and the barrie...
textThe emission wavelength of a quantum well depends on the bandgap of quantum well and the barrie...
This paper reports the effects of variation of number of quantum wells in material gain characterist...
This paper reports the effects of variation of number of quantum wells in material gain characterist...
This paper reports the effects of variation of number of quantum wells in material gain characterist...
This paper reports about the study of tunable anti-guiding factor and gain spectra of type-I GRIN (G...
This paper reports about the study of tunable anti-guiding factor and gain spectra of type-I GRIN (G...
GaSb-based type-I heterostructure exhibited low optical gain hence further investigations are needed...
Optical characterisation of InP/AlGaInP quantum dot laser structures, involving laser threshold and ...
A theoretical study of the polarization-independent optical gain using group V sublattice interdiffu...
Ce travail de thèse porte sur l’étude des propriétés optiques de nanofils InP et d’hétérostructures ...
International audienceWe have theoretically investigated the band structure engineering and optical ...
A type-II (with broken bandgap) W-shaped nano-heterostructure having layers combination of AlSb, InA...
This thesis is focused upon the experimental investigation of optical properties of InAs/InP NW hete...
This thesis is focused upon the experimental investigation of optical properties of InAs/InP NW hete...
textThe emission wavelength of a quantum well depends on the bandgap of quantum well and the barrie...
textThe emission wavelength of a quantum well depends on the bandgap of quantum well and the barrie...