Design of electron cyclotron resonance based reactive ion etching system

205-208Designs of the subsystems of the Electron Cyclotron Resonance (ECR) plasma stream source at frequency 2.45 GHz are explored. The assembled machine on this design has been evaluated using Langmuir probe and etching of Si based compound. The plasma densities have been found to be above the critical value at this frequency and etching rates are compatible to the reported values