Empirical model for temperature dependent threshold voltage and drain current-voltage characteristics of thin film short-channel SOI MOSFETs

683-688The temperature dependence of threshold voltage and drain-source current of thin film SOI MOSFETs has been investigated and modelled for a non-uniform distribution in the silicon film, taking into account the field dependent Mobility, and fringing field effects near the drain and source ends. A decrease in threshold voltage and drain current with increase in temperature is established. The predictions of the model are in good agreement with the experimental data. The model is valid for both short -channel and long-channel devices.