Room temperature magnetism in Ge based bulk dilute magnetic semiconductors

129-134Mössbauer spectroscopy was used to study the hyperfine interactions in the Bulk Fe0.008Ge0.992 system. The room temperature magnetism observed in the V and VI group donor impurity (As, Sb, Bi and Te) doped FeGe system is reviewed. Magneto-resistance and Hall effect measurements on these systems are discussed. The formation of Donor-Acceptor Pairs (DAP’s) and carrier mediation seems to be the cause for this room temperature magnetic interactions in the Ge based bulk dilute magnetic semiconductors