SiSMA: A statistical simulator for mismatch analysis of MOS ICs
- BIAGETTI, Giorgio
- ORCIONI, Simone
- TURCHETTI, Claudio
- CRIPPA, Paolo
- L. SIGNORACCI
- M. ALESSANDRINI
Publication date
January 2002
DOI Publisher
Institute of Electrical and Electronics Engineers (IEEE)Abstract
This paper presents a simulator for the statistical analysis of MOS integrated circuits affected by mismatch effect. The tool is based on a rigorous formulation of circuit equations including random current sources to take into account technological tolerances. The simulator requires a simulation time of several orders of magnitude lower than that required by Montecarlo analysis, while ensuring a good accuracy
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