A parameterized numerical model of integrated inductors for synthesis of RFIC matching networks

The impact of parasitic effects of integrated inductors for RFIC is not negligible so an accurate model of their behaviour is necessary. This paper presents a numerical parameterized model of integrated inductor with hollow planar spiral geometry and poly-ground-shield. The model allows to choose the inductor geometry with better quality in relation to its spiral side length and number of turns. A validation of the model has been achieved by a 3D electromagnetic field solver. The inductor model has been applied to the synthesis of matching networks for a low noise amplifier operating in the (5 to 6) GHz frequency ban