Si/SiGe modulation-doped heterostructures grown on silicon-on-insulator substrates for high-mobility two-dimensional electron gases.
- L. DI GASPARE
- K. ALFARAMAWI
- F. EVANGELISTI
- E. PALANGE
- G. MAJNI
- BARUCCA, Gianni
Publication date
January 2001
DOI Publisher
American Institute of Physics:2 Huntington Quadrangle, Suite 1NO1:Melville, NY 11747:(800)344-6902, (631)576-2287, EMAIL: subs@aip.org, INTERNET: http://www.aip.org, Fax: (516)349-9704Abstract
The growth of high-mobility modulation-doped Si/SiGe heterostructures on silicon-on-insulator substrates is demonstrated. The structural and electrical properties of the samples are reported to be comparable with those of similar samples grown on standard Si substrates. Electron mobilities as high as 2900cm2/Vs at room temperature and 8.2 × 104cm2/Vs at 4.2 K were obtained
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