Electrical properties of high-mobility two-dimensional electron gases in Si/SiGe modulation-doped heterostructures grown on silicon-on-insulator substrates
- L. DI GASPARE
- G. SCAPPUCCI
- E. PALANGE
- K. ALFARAMAWI
- F. EVANGELISTI
- G. MAJNI
- BARUCCA, Gianni
Publication date
January 2002
DOI Publisher
Elsevier BV:PO Box 211, 1000 AE Amsterdam Netherlands:011 31 20 4853757, 011 31 20 4853642, 011 31 20 4853641, EMAIL: nlinfo-f@elsevier.nl, INTERNET: http://www.elsevier.nl, Fax: 011 31 20 4853598Abstract
The growth of high-mobility modulation-doped Si/SiGe heterostructures on silicon-on-insulator (SOI) substrates is demonstrated. The structural and electrical properties of the samples are comparable with those of similar samples grown on standard Si substrates. Electron mobilities as high as 2800 cm2 V-1 s-1 at room temperature and 8.2×104 cm2 V-1 s-1 at 4 K are obtained
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