Epitaxy of III-V semiconductor nanowires towards optoelectronic devices

Semiconductor Nanowires: Epitaxy and Applications

Mårtensson, Thomas

January 2008

Semiconductor nanowires are nanoscale objects formed by bottom-up synthesis. In recent years their u...

Towards vertical III-V nanowire devices on silicon

Bakkers, E.P.A.M.
Borgström, M.T.
Einden, Van Den, W.
Weert, van, M.H.M.
Minot, E.D.
Kelkensberg, F.
Kouwen, Van, M.P.
Dam, Van, J.A.
Kouwenhoven, L.P.
Zwiller, V.
Helman, A.
Wunnicke, O.
Verheijen, M.A.

January 2007

In this paper, we have grown III-V nanowires by metal organic vapor phase epitaxy (MOVPE) using the ...

Towards vertical III-V nanowire devices on silicon

Bakkers, E.P.A.M.
Borgström, M.T.
Einden, Van Den, W.
Weert, van, M.H.M.
Minot, E.D.
Kelkensberg, F.
Kouwen, Van, M.P.
Dam, Van, J.A.
Kouwenhoven, L.P.
Zwiller, V.
Helman, A.
Wunnicke, O.
Verheijen, M.A.

January 2007

In this paper, we have grown III-V nanowires by metal organic vapor phase epitaxy (MOVPE) using the ...

Epitaxy of III-V semiconductor nanowires towards optoelectronic devices

Gao, Q
Joyce, HJ
Paiman, S
Tan, HH
Kim, Y
Smith, LM
Jackson, HE
Yarrison-Rice, JM
Zhang, X
Zou, J
Jagadish, C
,

November 2009

GaAs and InP based nanowires were grown epitaxially on GaAs or InP (111)B substrates by MOCVD via VL...

Epitaxy of III-V semiconductor nanowires towards optoelectronic devices

Gao, Q
Joyce, HJ
Paiman, S
Tan, HH
Kim, Y
Smith, LM
Jackson, HE
Yarrison-Rice, JM
Zhang, X
Zou, J
Jagadish, C

January 2009

GaAs and InP based nanowires were grown epitaxially on GaAs or InP (111)B substrates by MOCVD via VL...

Epitaxy of III-V semiconductor nanowires towards optoelectronic devices

Gao, Qiang
Joyce, Hannah J
Paiman, Suriati
Kim, Yong
Smith, Leigh M
Jackson, Howard E
Yarrison-Rice, Jan M
Zhang, Xin
Zou, Jin
Jagadish, Chennupati
Tan, Hark Hoe

February 2016

GaAs and InP based nanowires were grown epitaxially on GaAs or InP (111)B substrates by MOCVD via VL...

III-V compound semiconductor nanowires for optoelectronic device applications

Gao, Q
Joyce, HJ
Paiman, S
Kang, JH
Tan, HH
Kim, Y
Smith, LM
Jackson, HE
Yarrison-Rice, JM
Zou, J
Jagadish, C
,

March 2011

GaAs and InP based III-V compound semiconductor nanowires were grown epitaxially on GaAs (or Si) (11...

III-V compound semiconductor nanowires for optoelectronic device applications

Gao, Q
Joyce, HJ
Paiman, S
Kang, JH
Tan, HH
Kim, Y
Smith, LM
Jackson, HE
Yarrison-Rice, JM
Zou, J
Jagadish, C

March 2011

GaAs and InP based III-V compound semiconductor nanowires were grown epitaxially on GaAs (or Si) (11...

III-V compound semiconductor nanowires

Paiman, S
Joyce, HJ
Kang, JH
Gao, Q
Tan, HH
Kim, Y
Zhang, X
Zou, J
Jagadish, C

January 2009

InP and GaAs based nanowires were grown epitaxially on InP or GaAs (111)B substrates by metalorganic...

III-V compound semiconductor nanowires

Paiman, S
Joyce, HJ
Kang, JH
Gao, Q
Tan, HH
Kim, Y
Zhang, X
Zou, J
Jagadish, C
,

December 2009

InP and GaAs based nanowires were grown epitaxially on InP or GaAs (111)B substrates by metalorganic...

Nanowires for optoelectronic device applications

Gao, Q
Joyce, HJ
Paiman, S
Kang, JH
Tan, HH
Kim, Y
Smith, LM
Jackson, HE
Yarrison-Rice, JM
Zhang, X
Zou, J
Jagadish, C

January 2009

GaAs and InP based nanowires were grown epitaxially on GaAs or InP (111)B substrates by metalorganic...

Growth, structural and optical properties of III-V nanowires for optoelectronic applications

Joyce, HJ
Gao, Q
Kim, Y
Tan, HH
Jagadish, C
,

December 2007

We investigate the growth of III-V nanowires by MOCVD and the structural and optical properties of t...

Growth, structural and optical properties of III-V nanowires for optoelectronic applications

Joyce, HJ
Gao, Q
Kim, Y
Tan, HH
Jagadish, C

January 2007

We investigate the growth of III-V nanowires by MOCVD and the structural and optical properties of t...

Compound Semiconductor Nanowires for Optoelectronic Device Applications

Gao, Qiang
Joyce, Hannah J
Paiman, Suriati
Kang, Jung-Hyun
Jackson, Howard E
Smith, Leigh M
Yarrison-Rice, Jan M
Zou, Jin
Jagadish, Chennupati
Tan, Hark Hoe

February 2016

GaAs, InAs and InP based nanowires were grown epitaxially on (111)B substrates by metalorganic chemi...

Compound semiconductor nanowires for optoelectronic device applications

Gao, Q
Joyce, H
Paiman, S
Kang, JH
Tan, HH
Jagadish, C
Jackson, HE
Smith, LM
Yarrison-Rice, JM
Zou, J

January 2011

We review GaAs and InP nanowires and GaAs based nanowire heterostructures grown on (111)B substrates...

Semiconductor Nanowires: Epitaxy and Applications

Mårtensson, Thomas

January 2008

Semiconductor nanowires are nanoscale objects formed by bottom-up synthesis. In recent years their u...

Towards vertical III-V nanowire devices on silicon

Bakkers, E.P.A.M.
Borgström, M.T.
Einden, Van Den, W.
Weert, van, M.H.M.
Minot, E.D.
Kelkensberg, F.
Kouwen, Van, M.P.
Dam, Van, J.A.
Kouwenhoven, L.P.
Zwiller, V.
Helman, A.
Wunnicke, O.
Verheijen, M.A.

January 2007

In this paper, we have grown III-V nanowires by metal organic vapor phase epitaxy (MOVPE) using the ...

Towards vertical III-V nanowire devices on silicon

Bakkers, E.P.A.M.
Borgström, M.T.
Einden, Van Den, W.
Weert, van, M.H.M.
Minot, E.D.
Kelkensberg, F.
Kouwen, Van, M.P.
Dam, Van, J.A.
Kouwenhoven, L.P.
Zwiller, V.
Helman, A.
Wunnicke, O.
Verheijen, M.A.

January 2007

In this paper, we have grown III-V nanowires by metal organic vapor phase epitaxy (MOVPE) using the ...

Epitaxy of III-V semiconductor nanowires towards optoelectronic devices

Gao, Q
Joyce, HJ
Paiman, S
Tan, HH
Kim, Y
Smith, LM
Jackson, HE
Yarrison-Rice, JM
Zhang, X
Zou, J
Jagadish, C
,

November 2009

GaAs and InP based nanowires were grown epitaxially on GaAs or InP (111)B substrates by MOCVD via VL...

Epitaxy of III-V semiconductor nanowires towards optoelectronic devices

Gao, Q
Joyce, HJ
Paiman, S
Tan, HH
Kim, Y
Smith, LM
Jackson, HE
Yarrison-Rice, JM
Zhang, X
Zou, J
Jagadish, C

January 2009

GaAs and InP based nanowires were grown epitaxially on GaAs or InP (111)B substrates by MOCVD via VL...

Epitaxy of III-V semiconductor nanowires towards optoelectronic devices

Gao, Qiang
Joyce, Hannah J
Paiman, Suriati
Kim, Yong
Smith, Leigh M
Jackson, Howard E
Yarrison-Rice, Jan M
Zhang, Xin
Zou, Jin
Jagadish, Chennupati
Tan, Hark Hoe

February 2016

GaAs and InP based nanowires were grown epitaxially on GaAs or InP (111)B substrates by MOCVD via VL...

III-V compound semiconductor nanowires for optoelectronic device applications

Gao, Q
Joyce, HJ
Paiman, S
Kang, JH
Tan, HH
Kim, Y
Smith, LM
Jackson, HE
Yarrison-Rice, JM
Zou, J
Jagadish, C
,

March 2011

GaAs and InP based III-V compound semiconductor nanowires were grown epitaxially on GaAs (or Si) (11...

III-V compound semiconductor nanowires for optoelectronic device applications

Gao, Q
Joyce, HJ
Paiman, S
Kang, JH
Tan, HH
Kim, Y
Smith, LM
Jackson, HE
Yarrison-Rice, JM
Zou, J
Jagadish, C

March 2011

GaAs and InP based III-V compound semiconductor nanowires were grown epitaxially on GaAs (or Si) (11...

III-V compound semiconductor nanowires

Paiman, S
Joyce, HJ
Kang, JH
Gao, Q
Tan, HH
Kim, Y
Zhang, X
Zou, J
Jagadish, C

January 2009

InP and GaAs based nanowires were grown epitaxially on InP or GaAs (111)B substrates by metalorganic...

III-V compound semiconductor nanowires

Paiman, S
Joyce, HJ
Kang, JH
Gao, Q
Tan, HH
Kim, Y
Zhang, X
Zou, J
Jagadish, C
,

December 2009

InP and GaAs based nanowires were grown epitaxially on InP or GaAs (111)B substrates by metalorganic...

Nanowires for optoelectronic device applications

Gao, Q
Joyce, HJ
Paiman, S
Kang, JH
Tan, HH
Kim, Y
Smith, LM
Jackson, HE
Yarrison-Rice, JM
Zhang, X
Zou, J
Jagadish, C

January 2009

GaAs and InP based nanowires were grown epitaxially on GaAs or InP (111)B substrates by metalorganic...

Growth, structural and optical properties of III-V nanowires for optoelectronic applications

Joyce, HJ
Gao, Q
Kim, Y
Tan, HH
Jagadish, C
,

December 2007

We investigate the growth of III-V nanowires by MOCVD and the structural and optical properties of t...

Growth, structural and optical properties of III-V nanowires for optoelectronic applications

Joyce, HJ
Gao, Q
Kim, Y
Tan, HH
Jagadish, C

January 2007

We investigate the growth of III-V nanowires by MOCVD and the structural and optical properties of t...

Compound Semiconductor Nanowires for Optoelectronic Device Applications

Gao, Qiang
Joyce, Hannah J
Paiman, Suriati
Kang, Jung-Hyun
Jackson, Howard E
Smith, Leigh M
Yarrison-Rice, Jan M
Zou, Jin
Jagadish, Chennupati
Tan, Hark Hoe

February 2016

GaAs, InAs and InP based nanowires were grown epitaxially on (111)B substrates by metalorganic chemi...

Compound semiconductor nanowires for optoelectronic device applications

Gao, Q
Joyce, H
Paiman, S
Kang, JH
Tan, HH
Jagadish, C
Jackson, HE
Smith, LM
Yarrison-Rice, JM
Zou, J

January 2011

We review GaAs and InP nanowires and GaAs based nanowire heterostructures grown on (111)B substrates...

Semiconductor Nanowires: Epitaxy and Applications

Mårtensson, Thomas

January 2008

Semiconductor nanowires are nanoscale objects formed by bottom-up synthesis. In recent years their u...

Towards vertical III-V nanowire devices on silicon

Bakkers, E.P.A.M.
Borgström, M.T.
Einden, Van Den, W.
Weert, van, M.H.M.
Minot, E.D.
Kelkensberg, F.
Kouwen, Van, M.P.
Dam, Van, J.A.
Kouwenhoven, L.P.
Zwiller, V.
Helman, A.
Wunnicke, O.
Verheijen, M.A.

January 2007

In this paper, we have grown III-V nanowires by metal organic vapor phase epitaxy (MOVPE) using the ...

Towards vertical III-V nanowire devices on silicon

Bakkers, E.P.A.M.
Borgström, M.T.
Einden, Van Den, W.
Weert, van, M.H.M.
Minot, E.D.
Kelkensberg, F.
Kouwen, Van, M.P.
Dam, Van, J.A.
Kouwenhoven, L.P.
Zwiller, V.
Helman, A.
Wunnicke, O.
Verheijen, M.A.

January 2007

In this paper, we have grown III-V nanowires by metal organic vapor phase epitaxy (MOVPE) using the ...

Epitaxy of III-V semiconductor nanowires towards optoelectronic devices

Abstract

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Epitaxy of III-V semiconductor nanowires towards optoelectronic devices

Abstract

Extracted data

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