In this paper we investigate the optical gain seen by the polarization modes for each of Transverse Electric (TE) and Transverse Magnetic(TM) of GaAs/Al0.32Ga0.68As quantumwell lasers. The factor confinement and modal gain of proposed structure also have been simulated. Comparison between the two structures (single and multiple quantum) were conducted in the effort to evaluate and understand their behavior. Results show that the optical gain offers a better value in TE mode than in TM mode. As a result of being on higher standard and having a better performance in both cases thus this study conclude that the multiple quantum well structures are a better designed choice compared to single quantum well structure
A new gain mechanism active in certain quantum well laser diode structures is demonstrated and expla...
Polarization-insensitive semiconductor optical amplifiers (SOA's) with tensile-strained multi-quantu...
Thesis (Ph. D.)--University of Rochester. College of Engineering and Applied Science. Institute of O...
Multiple quantum well (MQW) structures display an optical anisotropy for light propagating in the pl...
Includes bibliographical references.An experimental study of the optical properties of GaAs/AlₓGa₁₋ₓ...
An approach to determine the optical modal gain spectra in multiple quantum-well semiconductor laser...
An approach to determine the optical modal gain spectra in multiple quantum-well semiconductor laser...
Structures of GaAs/GaA1As lasers and their performance characteristics are investigated experimental...
This paper reports the effects of variation of number of quantum wells in material gain characterist...
We studied the polarization anisotropy of electroluminescence (EL) and net modal gain characteristic...
We present the design and room-temperature lasing characteristics of single nanowires containing coa...
In this article we study magnetooptical Kerr effect (MOKE) of the GaAs/Al0.31Ga0.69As multiple quant...
We present the design and room-temperature lasing characteristics of single nanowires containing coa...
InGaAs strained quantum wells (QWs) with GaAs, AlGaAs, and GaAsP barriers are widely used in optical...
We derive formulas for the optical confinement factor Gamma from Maxwell's equations for TE and TM m...
A new gain mechanism active in certain quantum well laser diode structures is demonstrated and expla...
Polarization-insensitive semiconductor optical amplifiers (SOA's) with tensile-strained multi-quantu...
Thesis (Ph. D.)--University of Rochester. College of Engineering and Applied Science. Institute of O...
Multiple quantum well (MQW) structures display an optical anisotropy for light propagating in the pl...
Includes bibliographical references.An experimental study of the optical properties of GaAs/AlₓGa₁₋ₓ...
An approach to determine the optical modal gain spectra in multiple quantum-well semiconductor laser...
An approach to determine the optical modal gain spectra in multiple quantum-well semiconductor laser...
Structures of GaAs/GaA1As lasers and their performance characteristics are investigated experimental...
This paper reports the effects of variation of number of quantum wells in material gain characterist...
We studied the polarization anisotropy of electroluminescence (EL) and net modal gain characteristic...
We present the design and room-temperature lasing characteristics of single nanowires containing coa...
In this article we study magnetooptical Kerr effect (MOKE) of the GaAs/Al0.31Ga0.69As multiple quant...
We present the design and room-temperature lasing characteristics of single nanowires containing coa...
InGaAs strained quantum wells (QWs) with GaAs, AlGaAs, and GaAsP barriers are widely used in optical...
We derive formulas for the optical confinement factor Gamma from Maxwell's equations for TE and TM m...
A new gain mechanism active in certain quantum well laser diode structures is demonstrated and expla...
Polarization-insensitive semiconductor optical amplifiers (SOA's) with tensile-strained multi-quantu...
Thesis (Ph. D.)--University of Rochester. College of Engineering and Applied Science. Institute of O...