In this work, carbon thin films are grown in different background environments (Air, Helium and Argon) at different pressures (60, 160, 500 and 1000 mbar) by ablating the graphite target with Nd:YAG laser of wavelength of 1064 nm, pulse energy of 740 mJ and pulse rate of 6 ns. 10,000 laser shots are used to ablate graphite target under different ambient conditions. Grown thin films are analyzed by Atomic Force Microscopy (AFM) to measure thickness, roughness average, maximum profile peak height, average maximum height of profile and spacing ratio of the surface. The obtained results show that the roughness average, thickness of film, maximum profile peak height, average maximum height of profile and spacing ratio of thin films decreases wit...
In this study, functionally gradient diamond-like carbon (FGDLC) films are fabricated using a novel ...
The surface morphologies of pulsed laser deposited ultra-thin diamond-like carbon films were studied...
Carbon films were deposited onto GaAs substrates by pulsed laser deposition at low vacuum (10–15 mTo...
In this work, carbon thin films are grown in different background environments (Air, Helium and Argo...
Hard carbon thin films were synthesized on Si (100) and quartz substrates by the Pulsed Laser Deposi...
The surface morphology of carbon thin films deposited at temperatures 20°C and 300°C have been done ...
Hard carbon thin films were synthesized on Si (100) and quartz substrates by the Pulsed Laser Deposi...
AbstractThe Excimer KrF laser (of wave length 248nm, pulse energy of 13-50mJ and pulse width of 20ns...
This work aims to investigate the properties and microstructure of diamond-like carbon film deposite...
Amorphous carbon thin films, which have do not have optical band gap, and diamond like carbon films,...
We present preliminary results on carbon nanodots growth using pulsed laser deposition (PLD), with ...
The surface morphologies of pulsed laser deposited thick diamond-like carbon films were studied by o...
We present preliminary results on carbon nanodots growth using pulsed laser deposition (PLD), with ...
AbstractThe Excimer KrF laser (of wave length 248nm, pulse energy of 13-50mJ and pulse width of 20ns...
Pulsed Laser Deposition (PLD) is an attractive technique for growth of thin films thanks the advanta...
In this study, functionally gradient diamond-like carbon (FGDLC) films are fabricated using a novel ...
The surface morphologies of pulsed laser deposited ultra-thin diamond-like carbon films were studied...
Carbon films were deposited onto GaAs substrates by pulsed laser deposition at low vacuum (10–15 mTo...
In this work, carbon thin films are grown in different background environments (Air, Helium and Argo...
Hard carbon thin films were synthesized on Si (100) and quartz substrates by the Pulsed Laser Deposi...
The surface morphology of carbon thin films deposited at temperatures 20°C and 300°C have been done ...
Hard carbon thin films were synthesized on Si (100) and quartz substrates by the Pulsed Laser Deposi...
AbstractThe Excimer KrF laser (of wave length 248nm, pulse energy of 13-50mJ and pulse width of 20ns...
This work aims to investigate the properties and microstructure of diamond-like carbon film deposite...
Amorphous carbon thin films, which have do not have optical band gap, and diamond like carbon films,...
We present preliminary results on carbon nanodots growth using pulsed laser deposition (PLD), with ...
The surface morphologies of pulsed laser deposited thick diamond-like carbon films were studied by o...
We present preliminary results on carbon nanodots growth using pulsed laser deposition (PLD), with ...
AbstractThe Excimer KrF laser (of wave length 248nm, pulse energy of 13-50mJ and pulse width of 20ns...
Pulsed Laser Deposition (PLD) is an attractive technique for growth of thin films thanks the advanta...
In this study, functionally gradient diamond-like carbon (FGDLC) films are fabricated using a novel ...
The surface morphologies of pulsed laser deposited ultra-thin diamond-like carbon films were studied...
Carbon films were deposited onto GaAs substrates by pulsed laser deposition at low vacuum (10–15 mTo...