Add to ORKGTreating the conduction band carriers in n-type InSb as a semi-infinite degenerate electron gas we are able to account for characteristic variations with exciting beam energy of plasmon and phonon loss intensities and frequencies in HREEL spectra. The theory is free of adjustable parameters and introduces effects of electron gas screening at a surface in a natural way. To improve the agreement with experimental data it is necessary to take account of the non-parabolicity of the conduction band dispersion in InSb. © 1987 Elsevier Science Publishers B. V
The electronic properties of clean and sulfur-terminated surfaces of InSb(001) and (111) B are inves...
In the previous paper [7] we have directly compared the experimental Electron Energy Loss (EEL) spec...
Using angle-resolved photoelectron spectroscopy we study band structures of two dimensional electron...
The plasmon excitations of the degenerate free-electron gas in the surface space-charge region of In...
The long-range coupling of relatively high energy electrons to dipole fields associated with plasmon...
The phonon and plasmon excitations of both n- and p-type InSb(100) have been studied using high reso...
A combination of surface-sensitive techniques and electron transport measurements have been used to ...
The temperature dependence of the conduction-band plasmon excitation in doped InSb has been measured...
The behaviour of the conduction band electron plasmon at the polar surfaces of InAs and InSb has bee...
We present EELS cross-section data of surface phonons on Ag(001) along GAMMABAR-MBAR. The inelastic ...
We present analysis of electron-energy loss spectra of Ag(001) using first-principles surface phonon...
The electronic properties of n-type narrow gap III-V semiconductor surfaces and interfaces are inves...
The electronic properties of clean and sulfur-terminated surfaces of InSb(001) and (111) B are inves...
We present analysis of electron-energy loss spectra of Ag(001) using first-principles surface phonon...
The electronic properties of clean and sulfur-terminated surfaces of InSb(001) and (111) B are inves...
The electronic properties of clean and sulfur-terminated surfaces of InSb(001) and (111) B are inves...
In the previous paper [7] we have directly compared the experimental Electron Energy Loss (EEL) spec...
Using angle-resolved photoelectron spectroscopy we study band structures of two dimensional electron...
The plasmon excitations of the degenerate free-electron gas in the surface space-charge region of In...
The long-range coupling of relatively high energy electrons to dipole fields associated with plasmon...
The phonon and plasmon excitations of both n- and p-type InSb(100) have been studied using high reso...
A combination of surface-sensitive techniques and electron transport measurements have been used to ...
The temperature dependence of the conduction-band plasmon excitation in doped InSb has been measured...
The behaviour of the conduction band electron plasmon at the polar surfaces of InAs and InSb has bee...
We present EELS cross-section data of surface phonons on Ag(001) along GAMMABAR-MBAR. The inelastic ...
We present analysis of electron-energy loss spectra of Ag(001) using first-principles surface phonon...
The electronic properties of n-type narrow gap III-V semiconductor surfaces and interfaces are inves...
The electronic properties of clean and sulfur-terminated surfaces of InSb(001) and (111) B are inves...
We present analysis of electron-energy loss spectra of Ag(001) using first-principles surface phonon...
The electronic properties of clean and sulfur-terminated surfaces of InSb(001) and (111) B are inves...
The electronic properties of clean and sulfur-terminated surfaces of InSb(001) and (111) B are inves...
In the previous paper [7] we have directly compared the experimental Electron Energy Loss (EEL) spec...
Using angle-resolved photoelectron spectroscopy we study band structures of two dimensional electron...