We present in detail a thermodynamic equilibrium model for the growth of nanostructures on semiconductor substrates in heteroepitaxy and its application to germanium deposition on silicon. Some results of this model have been published previously, but the details of the formulation of the model are given here for the first time. The model allows the computation of the shape and size distributions of the surface nanostructures, as well as other properties of the system. We discuss the results of the model, and their incorporation into a nanostructure diagram that summarizes the relative stability of domes and pyramids in the bimodal size distributions. Copyright © 2007 American Scientific Publishers. All rights reserved
The enhanced functionality and tunability of electronic nanomaterials enables the development of nex...
The enhanced functionality and tunability of electronic nanomaterials enables the development of nex...
Epitaxial self-assembled quantum dots (SAQDs) result from Stranski-Krastanow growth whereby epitaxia...
We present in detail a thermodynamic equilibrium model for the growth of nanostructures on semicondu...
We present in detail a thermodynamic equilibrium model for the growth of nanostructures on semicondu...
We present a nanostructure diagram for use in designing heteroepitaxial systems of quantum dots. The...
Strained epitaxial growth of Ge on Si(001) produces self-assembled, nanometer scale islands, or quan...
This article presents the results of three-dimensional modeling of heteroepitaxial thin film growth ...
Epitaxial growth of germanium quantum dots on an oxidized silicon surface is considered. A kinetic m...
© 2020 Elsevier B.V. Numerous theoretical and experimental studies show that during epitaxial growth...
International audienceWe investigate the nucleation and growth of anisotropic and strained quantum d...
AbstractSelf-assembled nanostructures, such as quantum dots (QDs), quantum rings (QRs) and nanowires...
Starting with the basic definition, a short description of a few relevant physical quantities playin...
There exist numerous experimental data which indicate spontaneous formation of periodically ordered ...
In this paper theoretical modeling of formation and growth of germanium–silicon quantum dots in the ...
The enhanced functionality and tunability of electronic nanomaterials enables the development of nex...
The enhanced functionality and tunability of electronic nanomaterials enables the development of nex...
Epitaxial self-assembled quantum dots (SAQDs) result from Stranski-Krastanow growth whereby epitaxia...
We present in detail a thermodynamic equilibrium model for the growth of nanostructures on semicondu...
We present in detail a thermodynamic equilibrium model for the growth of nanostructures on semicondu...
We present a nanostructure diagram for use in designing heteroepitaxial systems of quantum dots. The...
Strained epitaxial growth of Ge on Si(001) produces self-assembled, nanometer scale islands, or quan...
This article presents the results of three-dimensional modeling of heteroepitaxial thin film growth ...
Epitaxial growth of germanium quantum dots on an oxidized silicon surface is considered. A kinetic m...
© 2020 Elsevier B.V. Numerous theoretical and experimental studies show that during epitaxial growth...
International audienceWe investigate the nucleation and growth of anisotropic and strained quantum d...
AbstractSelf-assembled nanostructures, such as quantum dots (QDs), quantum rings (QRs) and nanowires...
Starting with the basic definition, a short description of a few relevant physical quantities playin...
There exist numerous experimental data which indicate spontaneous formation of periodically ordered ...
In this paper theoretical modeling of formation and growth of germanium–silicon quantum dots in the ...
The enhanced functionality and tunability of electronic nanomaterials enables the development of nex...
The enhanced functionality and tunability of electronic nanomaterials enables the development of nex...
Epitaxial self-assembled quantum dots (SAQDs) result from Stranski-Krastanow growth whereby epitaxia...