Electronic structure of In2O3 from resonant x-ray emission spectroscopy

The valence and conduction band structures of In2 O3 have been measured using a combination of valence band x-ray photoemission spectroscopy, O K -edge resonant x-ray emission spectroscopy, and O K -edge x-ray absorption spectroscopy. Excellent agreement is noted between the experimental spectra and O 2p partial density of states calculated within hybrid density functional theory. Our data are consistent with a direct band gap for In2 O3. © 2009 American Institute of Physics