Calculations of the single-particle spectral function for the two-band Hubbard model as a function of doping and nearest-neighbor Coulomb repulsion are performed on finite-size clusters. It is shown that for hole doping the effect of the nearest-neighbor Coulomb repulsion leads to the effective pinning of the Fermi energy, and to the creation of new states in the charge-transfer gap. For electron doping, however, the model behaves as a one-band Hubbard model with the Fermi energy moving into the conduction band. The results of this calculation are in qualitative agreement with some of the spectroscopic studies of the electronic structure at the Fermi energy of the high-temperature cuprate superconductors. © 1995 The American Physical Societ...
We study the three-band Hubbard model, commonly used to describe the copper-oxygen planes of high-Tc...
We study the effect of nearest neighbour Coulomb repulsion and of polarization screening on the cond...
The energy spectrum of a mobile hole in a two-band model for Cu oxides, in the limit where the virtu...
3noWe explore the ground-state properties of the two-band Hubbard model with degenerate electronic b...
The Mott metal-insulator transition in the two-band Hubbard model in infinite dimensions is studied ...
How a Mott insulator develops into a weakly coupled metal upon doping is a central question to under...
One central challenge in high-Tc superconductivity (SC) is to derive a detailed understanding for th...
How a Mott insulator develops into a weakly coupled metal upon doping is a central question to under...
Starting from the exact solution of the Hubbard model in the atomic limit, and treating the hopping ...
The electron spectrum structure in the half-filled Hubbard model is considered in terms of the one-p...
Abstract One central challenge in high-Tc superconductivity (SC) is to derive a detailed understandi...
We explore the ground-state properties of the two-band Hubbard model with degenerate electronic band...
Hubbard U is equal to the energy of the insulator to metal transition in Mott insulators. Hubbard U ...
Hund´s coupling and the metal-insulator transition in the two-band Hubbard model / Th. Pruschke, R. ...
Hund´s coupling and the metal-insulator transition in the two-band Hubbard model / Th. Pruschke, R. ...
We study the three-band Hubbard model, commonly used to describe the copper-oxygen planes of high-Tc...
We study the effect of nearest neighbour Coulomb repulsion and of polarization screening on the cond...
The energy spectrum of a mobile hole in a two-band model for Cu oxides, in the limit where the virtu...
3noWe explore the ground-state properties of the two-band Hubbard model with degenerate electronic b...
The Mott metal-insulator transition in the two-band Hubbard model in infinite dimensions is studied ...
How a Mott insulator develops into a weakly coupled metal upon doping is a central question to under...
One central challenge in high-Tc superconductivity (SC) is to derive a detailed understanding for th...
How a Mott insulator develops into a weakly coupled metal upon doping is a central question to under...
Starting from the exact solution of the Hubbard model in the atomic limit, and treating the hopping ...
The electron spectrum structure in the half-filled Hubbard model is considered in terms of the one-p...
Abstract One central challenge in high-Tc superconductivity (SC) is to derive a detailed understandi...
We explore the ground-state properties of the two-band Hubbard model with degenerate electronic band...
Hubbard U is equal to the energy of the insulator to metal transition in Mott insulators. Hubbard U ...
Hund´s coupling and the metal-insulator transition in the two-band Hubbard model / Th. Pruschke, R. ...
Hund´s coupling and the metal-insulator transition in the two-band Hubbard model / Th. Pruschke, R. ...
We study the three-band Hubbard model, commonly used to describe the copper-oxygen planes of high-Tc...
We study the effect of nearest neighbour Coulomb repulsion and of polarization screening on the cond...
The energy spectrum of a mobile hole in a two-band model for Cu oxides, in the limit where the virtu...