Low temperature electrical transport properties in p-SnSe single crystals

The electronic transport properties of p-type tin selenide (SnSe) grown by direct vapor transport (DVT) technique were investigated via Hall effect in the temperature range 40 < T < 300 K. The temperature dependence of conductivity revealed the existence of impurity energy level in the band gap of the crystal. The temperature dependence of the carrier concentration was analyzed using the single-donor – single-acceptor model. The Hall mobility increases by decreasing temperature up to 120 K and then decreases along with temperature. The observed temperature dependant mobility in the temperature range 120 < T < 300 K and 40 < T < 120 K was found to be limited by homopolar and ionized impurity mode scatterings respectively