Atomic-scale colour centres in bulk and nanocrystalline SiC are promising systems for quantum photonics compatible with fiber optics, quantum information processing and sensing at ambient conditions. Colour centres which acts as stable single photon sources in SiC can be key elements for quantum photonics and communications. It has been shown that there are at least two families of colour centres in SiC with S = 1 and S = 3/2, which have the property of optical alignment of the spin levels even at room temperature and above. The spin state can be initialized, manipulated and readout by means of optically detected magnetic resonance (ODMR), level anticrossing and cross-relaxation. Recently, we observed the effects of “hole burning” in the OD...
We have investigated the optical properties of the (NV)− center in 3C-SiC to determine the photolumi...
This thesis investigates the development of quantum technologies with spins in silicon carbide (SiC)...
Whereas intrinsic defects in silicon carbide (SiC) have been widely considered for qubit application...
Atomic-scale colour centres in bulk and nanocrystalline SiC are promising systems for quantum photon...
© 2016, Springer-Verlag Wien.Atomic-scale colour centres in bulk and nanocrystalline SiC are promisi...
Silicon carbide (SiC) has recently been investigated as an alternative material to host deep optical...
In the last two decades, bulk, homoepitaxial, and heteroepitaxial growth of silicon carbide (SiC) ha...
The electron spins of semiconductor defects can have complex interactions with their host, particula...
This paper summarizes key findings in single-photon generation from deep level defects in silicon ca...
Divacancy defects in silicon carbide have long-lived electronic spin states and sharp optical transi...
Spin-active color centers in solids show good performance for quantum technologies. Several transiti...
The divacancies in SiC are a family of paramagnetic defects that show promise for quantum communicat...
Color centers in wide-bandgap semiconductors, including diamond and silicon carbide (SiC), are attra...
Constructing quantum devices comprises various challenging tasks, especially when concerning their n...
Color centers in wide-bandgap semiconductors are attractive systems for quantum technologies since t...
We have investigated the optical properties of the (NV)− center in 3C-SiC to determine the photolumi...
This thesis investigates the development of quantum technologies with spins in silicon carbide (SiC)...
Whereas intrinsic defects in silicon carbide (SiC) have been widely considered for qubit application...
Atomic-scale colour centres in bulk and nanocrystalline SiC are promising systems for quantum photon...
© 2016, Springer-Verlag Wien.Atomic-scale colour centres in bulk and nanocrystalline SiC are promisi...
Silicon carbide (SiC) has recently been investigated as an alternative material to host deep optical...
In the last two decades, bulk, homoepitaxial, and heteroepitaxial growth of silicon carbide (SiC) ha...
The electron spins of semiconductor defects can have complex interactions with their host, particula...
This paper summarizes key findings in single-photon generation from deep level defects in silicon ca...
Divacancy defects in silicon carbide have long-lived electronic spin states and sharp optical transi...
Spin-active color centers in solids show good performance for quantum technologies. Several transiti...
The divacancies in SiC are a family of paramagnetic defects that show promise for quantum communicat...
Color centers in wide-bandgap semiconductors, including diamond and silicon carbide (SiC), are attra...
Constructing quantum devices comprises various challenging tasks, especially when concerning their n...
Color centers in wide-bandgap semiconductors are attractive systems for quantum technologies since t...
We have investigated the optical properties of the (NV)− center in 3C-SiC to determine the photolumi...
This thesis investigates the development of quantum technologies with spins in silicon carbide (SiC)...
Whereas intrinsic defects in silicon carbide (SiC) have been widely considered for qubit application...