Fully microcrystalline silicon, μc-Si, thin films (<100 nm) have been deposited at low temperature (60 °C) on Corning glass and plastic flexible polyimide substrates by plasma enhanced chemical vapor deposition (PECVD) using SiF4-H2-He. The effect of deposition temperature on the structure, i.e., crystallinity and density, of μc-Si films is investigated by spectroscopic ellipsometry in the 1.5−5.5 eV energy range. Modeling of spectroscopic ellipsometry data is used for highlighting crystallinity of the substrate/film interface, i.e., the absence of any amorphous incubation layer. It is found that film crystallinity does not depend on film thickness, and it increases with the decrease of deposition temperature. The temperature depe...
[[abstract]]This paper presents the results of low temperature polycrystalline silicon growth on SiO...
[[abstract]]Polycrystalline silicon films with grain size of 1 µm were successfully deposited on gla...
The microstructure of microcrystalline silicon ($\mu$c-Si:H) grown in a low-temperature ($\lesssim$ ...
Fully microcrystalline silicon, μc-Si, thin films (<100 nm) have been deposited at low temperature ...
Microcrystalline silicon thin films at different growth stages were prepared by hot wire chemical va...
Crystallinity and material quality of hydrogenated microcrystalline silicon (μc-Si:H) films change d...
[[abstract]]This paper presents the results of very low temperature micro-meter-order polycrystallin...
Microcrystalline silicon (mc-Si) films deposited using a Plasma Enhanced Chemical Vapour Deposition ...
Real time spectroscopic ellipsometry has been applied to develop deposition phase diagrams that can ...
Silicon thin films were synthesized simultaneously on single-crystal silicon and glass substrates by...
Silicon thin films with a variable content of nanocrystalline phase were deposited on single-crystal...
Microcrystalline silicon films grown in an expanding thermal plasma, i.e. in the absence of ion bomb...
Hydrogenated microcrystalline silicon (µc-Si:H) and epitaxial silicon (epi-Si) films have been produ...
Microcrystalline silicon films grown in an expanding thermal plasma, i.e. in the absence of ion bomb...
Undoped hydrogenated microcrystalline silicon (mu c-Si:H) thin films were prepared at low temperatur...
[[abstract]]This paper presents the results of low temperature polycrystalline silicon growth on SiO...
[[abstract]]Polycrystalline silicon films with grain size of 1 µm were successfully deposited on gla...
The microstructure of microcrystalline silicon ($\mu$c-Si:H) grown in a low-temperature ($\lesssim$ ...
Fully microcrystalline silicon, μc-Si, thin films (<100 nm) have been deposited at low temperature ...
Microcrystalline silicon thin films at different growth stages were prepared by hot wire chemical va...
Crystallinity and material quality of hydrogenated microcrystalline silicon (μc-Si:H) films change d...
[[abstract]]This paper presents the results of very low temperature micro-meter-order polycrystallin...
Microcrystalline silicon (mc-Si) films deposited using a Plasma Enhanced Chemical Vapour Deposition ...
Real time spectroscopic ellipsometry has been applied to develop deposition phase diagrams that can ...
Silicon thin films were synthesized simultaneously on single-crystal silicon and glass substrates by...
Silicon thin films with a variable content of nanocrystalline phase were deposited on single-crystal...
Microcrystalline silicon films grown in an expanding thermal plasma, i.e. in the absence of ion bomb...
Hydrogenated microcrystalline silicon (µc-Si:H) and epitaxial silicon (epi-Si) films have been produ...
Microcrystalline silicon films grown in an expanding thermal plasma, i.e. in the absence of ion bomb...
Undoped hydrogenated microcrystalline silicon (mu c-Si:H) thin films were prepared at low temperatur...
[[abstract]]This paper presents the results of low temperature polycrystalline silicon growth on SiO...
[[abstract]]Polycrystalline silicon films with grain size of 1 µm were successfully deposited on gla...
The microstructure of microcrystalline silicon ($\mu$c-Si:H) grown in a low-temperature ($\lesssim$ ...