PULSED LASER ATOM PROBE ANALYSIS OF III-V COMPOUND SEMICONDUCTORS

The pulsed laser atom probe has been shown to give stoichiometrically correct analyses of GaAs and InAs. Temperature rises under pulsed laser irradiation are investigated and the generation of As cluster ions is found to be primarily due to field evaporation at elevated temperatures. Preliminary results on the analysis of ternary materials is presented, showing local composition variations in a GaAlAs layer