Observation of growth during the MOVPE of III-nitrides

This paper reports on how the observation of the morphology development and growth by in situ optical methods as well as the determination of substrate temperature can be employed to tailor the characteristics of GaN and to control growth in MOVPE (metalorganic vapor phase epitaxy). Furthermore for the first time a method will be demonstrated that allows the difficult determination of an alloy composition – here (Al$_{\rm x}$Ga$_{\rm 1-x}$)N – independent on the perfection and roughness of the developing layer