Characterization of stress in semiconductor wafers using birefringence measurements
- E. M. Gamarts
- P. A. Dobromyslov
- V. A. Krylov
- S. V. Prisenko
- E. A. Jakushenko
- V. I. Safarov
DOIAbstract
The nondestructive optical method for quality control based on measurement of birefringence in semiconductor wafers is described. The influence of crystallographic orientation and multiple reflections in wafers on measured parameters are discussed. Also the full description of the device used for investigation of commercial semiconductor wafers is given. The last part of the article is devoted to the results of experimental investigations of semiconductor wafers during manufacturing of semiconductor devices and IC
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