The deep level optical spectroscopy by the so called DLOS technique gives the spectral shape of both σon(hv) and σ op(hv), the optical cross sections for the transitions between a deep level and the conduction and valence bands, in a very sensitive and selective way. We have applied this technique to the optical study of the HL1 trap related to chromium in GaAs, in very pure LPE layers of n and p type doped with chromium. We can therefore determine what kind of charge states of chromium we are dealing with by çomparing σo n and σop with the optical absorption spectra in bulk materials. Moreover, comparisons between the excitation spectra of luminescence and the photoionization cross section σo n and σop have given unambiguous interpretation...
Excited state absorption (ESA) measurements of the Cr:Li2B4O7 glass (Cr:LBO-glass) along with prelim...
A dual-laser-plasma technique has been used to measure photoabsorption by atomic Cr and Mn and their...
The room‐temperature spectral detectivity of Cr‐doped GaAs has been examined in the impurity excitat...
The deep level optical spectroscopy by the so called DLOS technique gives the spectral shape of both...
We have performed photoluminescence experiments, using two excitation sources : a YAG laser and a kr...
The 0.839 eV luminescence line in GaAs : Cr is generally interpreted as an internal transition in Cr...
We have performed high resolution luminescence spectroscopy of a chromium related no-phonon multiple...
The photoionization absorption spectrum of the strongly Cr-doped GaAs samples was measured in the en...
Abstract- In the present paper, constant photocurrent method, ‘CPM ’ is used to determine the defect...
After a review of the main features of deep level thermal spectroscopy in semiconductors (DLTS), we ...
Trivalent Nd, Dy, Ho, Er, Tm, Sm and Eu usually act as electron trapping centers in wide band gap co...
Temperature-dependent Hall-effect measurements on two Cr-doped GaAs samplesshow a dominant center at...
The « beam-foil » study in the far ultraviolet region has yielded spectra of highly ionized chromium...
Deep levels have been characterized in n- and p-type GaAs epilayers grown by metal organic chemical ...
Measurements of photoconductivity and secondary excitation spectra have been used to determine the p...
Excited state absorption (ESA) measurements of the Cr:Li2B4O7 glass (Cr:LBO-glass) along with prelim...
A dual-laser-plasma technique has been used to measure photoabsorption by atomic Cr and Mn and their...
The room‐temperature spectral detectivity of Cr‐doped GaAs has been examined in the impurity excitat...
The deep level optical spectroscopy by the so called DLOS technique gives the spectral shape of both...
We have performed photoluminescence experiments, using two excitation sources : a YAG laser and a kr...
The 0.839 eV luminescence line in GaAs : Cr is generally interpreted as an internal transition in Cr...
We have performed high resolution luminescence spectroscopy of a chromium related no-phonon multiple...
The photoionization absorption spectrum of the strongly Cr-doped GaAs samples was measured in the en...
Abstract- In the present paper, constant photocurrent method, ‘CPM ’ is used to determine the defect...
After a review of the main features of deep level thermal spectroscopy in semiconductors (DLTS), we ...
Trivalent Nd, Dy, Ho, Er, Tm, Sm and Eu usually act as electron trapping centers in wide band gap co...
Temperature-dependent Hall-effect measurements on two Cr-doped GaAs samplesshow a dominant center at...
The « beam-foil » study in the far ultraviolet region has yielded spectra of highly ionized chromium...
Deep levels have been characterized in n- and p-type GaAs epilayers grown by metal organic chemical ...
Measurements of photoconductivity and secondary excitation spectra have been used to determine the p...
Excited state absorption (ESA) measurements of the Cr:Li2B4O7 glass (Cr:LBO-glass) along with prelim...
A dual-laser-plasma technique has been used to measure photoabsorption by atomic Cr and Mn and their...
The room‐temperature spectral detectivity of Cr‐doped GaAs has been examined in the impurity excitat...