The effect of an evaporated thick aluminium paper on electrical properties of multicrystalline and gold contaminated FZ monocrystalline silicon wafers was investigated. By means of minority carrier diffusion length measurements and Deep Level Transient Spectroscopy, it was deduced that the material improvements observed after annealing at 900 °C are due to gettering of metallic impurities in the Al-Si alloyed layer.
The effectiveness of phosphorus gettering, and the possible re-injection of impurities from the gett...
In multicrystalline silicon the interaction of dissolved impurities with extended crystallographic d...
The purpose of this Master's thesis was to study aluminium gettering of iron impurities in single cr...
The effect of an evaporated thick aluminium paper on electrical properties of multicrystalline and g...
The effect of aluminum gettering on different silicon materials used for solar cells has been inves...
We present a method for the purification of silicon ingots during the crystallization process that r...
We present experimental evidence for the impurity gettering effect of atomic layer deposited alumin...
The generation of crystallographic defects induced by metallic impurities diffusing from the back si...
The electrical activity of silver as well as its annealing properties in 10 Ω cm p-type Fz silicon s...
We demonstrate gettering of metal impurities in p-type multicrystalline silicon (mc-Si) wafers by an...
Gettering experiments have been performed using multi-crystalline silicon wafers from highly contami...
In order to improve the electron diffusion lengths Ln in P-type large grained polycrystalline silico...
The extraction of metal impurities during phosphorus diffusion gettering (PDG) is one of the crucial...
The electrical activity of silver as well as its annealing properties in $10~\Omega$ cm p-type Fz si...
Abstract- The influence of aluminium on the electrical properties of silicon bicrystals was analyzed...
The effectiveness of phosphorus gettering, and the possible re-injection of impurities from the gett...
In multicrystalline silicon the interaction of dissolved impurities with extended crystallographic d...
The purpose of this Master's thesis was to study aluminium gettering of iron impurities in single cr...
The effect of an evaporated thick aluminium paper on electrical properties of multicrystalline and g...
The effect of aluminum gettering on different silicon materials used for solar cells has been inves...
We present a method for the purification of silicon ingots during the crystallization process that r...
We present experimental evidence for the impurity gettering effect of atomic layer deposited alumin...
The generation of crystallographic defects induced by metallic impurities diffusing from the back si...
The electrical activity of silver as well as its annealing properties in 10 Ω cm p-type Fz silicon s...
We demonstrate gettering of metal impurities in p-type multicrystalline silicon (mc-Si) wafers by an...
Gettering experiments have been performed using multi-crystalline silicon wafers from highly contami...
In order to improve the electron diffusion lengths Ln in P-type large grained polycrystalline silico...
The extraction of metal impurities during phosphorus diffusion gettering (PDG) is one of the crucial...
The electrical activity of silver as well as its annealing properties in $10~\Omega$ cm p-type Fz si...
Abstract- The influence of aluminium on the electrical properties of silicon bicrystals was analyzed...
The effectiveness of phosphorus gettering, and the possible re-injection of impurities from the gett...
In multicrystalline silicon the interaction of dissolved impurities with extended crystallographic d...
The purpose of this Master's thesis was to study aluminium gettering of iron impurities in single cr...
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