We report on growth and properties of Si/SiGe strained layer superlattices. Critical thicknesses and relaxation processes in single layers are studied with Raman spectroscopy, LEED, and TEM. Phonon Raman scattering is used to determine built-in strain and period length of superlattices. Transport measurements show mobility enhancement in selectively doped samples. The ordering of electronic bands due to strain yields to two-dimensional electron gases in Si
We present a calculation of both electronic energy levels and intensities of optical transitions in ...
Raman spectroscopy and spectroscopic ellipsometry have been used to characterize Si/Si-0.78 Ge-0.22 ...
We report the results of structural characterisation of five-period Si-Si1-xGex/Si(001), (x = 0.22) ...
Short-period Si/Ge strained-layer superlattices are grown by molecular beam epitaxy (MBE) on Si(100)...
High quality Si/Ge strained-layer superlattices composed of a sequence of alternating 3 monolayers p...
Short-period Si/SiGe strained-layer superlattices have been grown on bulk single-crystal SiGe substr...
Strained-layer superlattices (SLS) composed of a sequence of ultrathin Si and Ge layers are grown on...
Structural investigations of high quality Si/Ge strained-layer superlattices (SLSs) on [001] oriente...
20-period strained-layer superlattices of nominal composition and width Ge0.2Si0.8 (5 nm)/Si(25 nm) ...
20-period strained-layer superlattices of nominal composition and width Ge0.2Si0.8 (5 nm)/Si(25 nm) ...
We have used Raman spectroscopy, transmission electron microscopy, x-ray diffraction, and x-ray phot...
Raman scattering spectroscopy has been widely used to characterize the physical properties of semico...
[[abstract]]The strained silicon grown on the silicon-germanium alloy (SiGe alloy) virtual substrate...
[[abstract]]The strained silicon grown on the silicon-germanium alloy (SiGe alloy) virtual substrate...
A new mode of misfit defect formation has been observed for the first time in high quality Si/Ge str...
We present a calculation of both electronic energy levels and intensities of optical transitions in ...
Raman spectroscopy and spectroscopic ellipsometry have been used to characterize Si/Si-0.78 Ge-0.22 ...
We report the results of structural characterisation of five-period Si-Si1-xGex/Si(001), (x = 0.22) ...
Short-period Si/Ge strained-layer superlattices are grown by molecular beam epitaxy (MBE) on Si(100)...
High quality Si/Ge strained-layer superlattices composed of a sequence of alternating 3 monolayers p...
Short-period Si/SiGe strained-layer superlattices have been grown on bulk single-crystal SiGe substr...
Strained-layer superlattices (SLS) composed of a sequence of ultrathin Si and Ge layers are grown on...
Structural investigations of high quality Si/Ge strained-layer superlattices (SLSs) on [001] oriente...
20-period strained-layer superlattices of nominal composition and width Ge0.2Si0.8 (5 nm)/Si(25 nm) ...
20-period strained-layer superlattices of nominal composition and width Ge0.2Si0.8 (5 nm)/Si(25 nm) ...
We have used Raman spectroscopy, transmission electron microscopy, x-ray diffraction, and x-ray phot...
Raman scattering spectroscopy has been widely used to characterize the physical properties of semico...
[[abstract]]The strained silicon grown on the silicon-germanium alloy (SiGe alloy) virtual substrate...
[[abstract]]The strained silicon grown on the silicon-germanium alloy (SiGe alloy) virtual substrate...
A new mode of misfit defect formation has been observed for the first time in high quality Si/Ge str...
We present a calculation of both electronic energy levels and intensities of optical transitions in ...
Raman spectroscopy and spectroscopic ellipsometry have been used to characterize Si/Si-0.78 Ge-0.22 ...
We report the results of structural characterisation of five-period Si-Si1-xGex/Si(001), (x = 0.22) ...
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