TIME DEPENDENCE OF THE NUCLEATION OF SLIP DISLOCATIONS DURING LASER ANNEALING OF SILICON

We report new observations on cw laser annealing of ion implanted Silicon which have enabled us to determine the time necessary to nucleate a slip dislocation in silicon. Optical microscopy and x-ray topography of 50 to 80 µm diameter spots annealed from 10 to 1000 ms indicate that pulses shorter than ~ 50 ms will not introduce slip dislocations even for those cases where the surface regrows via a liquid phase epitaxial process