With the aim of extending positron-lifetime measurements to high temperature and avoiding surface and source contributions, experiments have been performed with positron emitting isotopes in a state of diluted solid solution in the material investigated. Further, it has been shown that the positron-lifetime data can be used in a new way to obtain the vacancy formation energy E F1V without the many uncertainties of the trapping model. The previously observed linear correlation between EF1V and the inflection temperature Ti in the τ(1/T) curve has also been explained.Dans le but d'étendre les mesures de temps de vie des positons vers les hautes températures et d'éviter les complications dues aux annihilations dans la source et à la surface de...
At a vacant lattice cell positron-ion repulsion is reduced leading to positron trapping. This causes...
A positron lifetime component of ~170 ps has been reported for irradiated tungsten (W) in some studi...
Positron states at pure monovacancies and divacancies and vacancy-phosphorus pairs in Si as well as ...
Abstract: The basic principles of positron annihilation physics are briefly discussed and the three ...
Temperature dependent effects, which may have a bearing on determinations of vacancy formation entha...
The basic principles of positron annihilation physics are briefly discussed and the three most impor...
The basic principles of positron annihilation physics are briefly discussed and the three most impor...
The basic principles of positron annihilation physics are briefly discussed and the three most impor...
Since positron annihilation measurement is very useful to the study of defects in solids, many inves...
Positron Annihilation Lifetime Spectroscopy can be used to characterize radia- tion-induced material...
Positron annihilation lifetime spectroscopy has been used to study the formation of positronium in h...
The central task of positron lifetime spectroscopy is that of determining defect types and concentra...
A digital positron lifetime spectrometer has been designed, set up and tested comprehensively. The s...
Crystal lattice defects especially dislocations gave an important effect on mechanical material prop...
At a vacant lattice cell positron-ion repulsion is reduced leading to positron trapping. This causes...
At a vacant lattice cell positron-ion repulsion is reduced leading to positron trapping. This causes...
A positron lifetime component of ~170 ps has been reported for irradiated tungsten (W) in some studi...
Positron states at pure monovacancies and divacancies and vacancy-phosphorus pairs in Si as well as ...
Abstract: The basic principles of positron annihilation physics are briefly discussed and the three ...
Temperature dependent effects, which may have a bearing on determinations of vacancy formation entha...
The basic principles of positron annihilation physics are briefly discussed and the three most impor...
The basic principles of positron annihilation physics are briefly discussed and the three most impor...
The basic principles of positron annihilation physics are briefly discussed and the three most impor...
Since positron annihilation measurement is very useful to the study of defects in solids, many inves...
Positron Annihilation Lifetime Spectroscopy can be used to characterize radia- tion-induced material...
Positron annihilation lifetime spectroscopy has been used to study the formation of positronium in h...
The central task of positron lifetime spectroscopy is that of determining defect types and concentra...
A digital positron lifetime spectrometer has been designed, set up and tested comprehensively. The s...
Crystal lattice defects especially dislocations gave an important effect on mechanical material prop...
At a vacant lattice cell positron-ion repulsion is reduced leading to positron trapping. This causes...
At a vacant lattice cell positron-ion repulsion is reduced leading to positron trapping. This causes...
A positron lifetime component of ~170 ps has been reported for irradiated tungsten (W) in some studi...
Positron states at pure monovacancies and divacancies and vacancy-phosphorus pairs in Si as well as ...