INFLUENCE OF H2 PARTIAL PRESSURE ON THE MORPHOLOGY AND CRYSTALLIZATION OF SiC LAYERS OBTAINED BY LPCVD USING TETRAMETHYLSILANE

MORPHOLOGICAL ASPECTS OF SILICON CARBIDE CHEMICALLY VAPOR-DEPOSITED ON GRAPHITE

A. PARRETTA
A. CAMANZI
G. GIUNTA
V. ADONCECCHI
P. ALESSANDRINI
A. MAZZARANO

The morphological features of silicon carbide coatings, deposited on graphite from SiCl4, C3H8 and H...

Influence of hydrogen dilution on the growth of nanocrystalline silicon carbide films by low-frequency inductively coupled plasma chemical vapor deposition

Cheng, Q.
Xu, S.
Chai, J.W.
Huang, S.Y.
Ren, Y.P.
Long, J.D.
Rutkevych, P.P.
Ostrikov, K.

January 2008

Nanocrystalline silicon carbide (nc-SiC) films are prepared by low-frequency inductively coupled pla...

Low pressure chemical vapor deposition (LPCVD) of silicon carbide from diethylsilane

Shi, Yi-Tong

August 1991

The depositions of amorphous and cubic-crystal SiC from a new chemical vapor deposition source, diet...

INFLUENCE OF H2 PARTIAL PRESSURE ON THE MORPHOLOGY AND CRYSTALLIZATION OF SiC LAYERS OBTAINED BY LPCVD USING TETRAMETHYLSILANE

A. FIGUERAS
R. RODRIGUEZ-CLEMENTE
S. GARELIK
J. SANTISO
B . ARMAS
C. COMBESCURE
A. MAZEL
Y. KIHN
J. SÉVELY

January 1991

Silicon carbide layers have been produced by Chemical Vapor Deposition at low pressures (LPCVD) on g...

INFLUENCE OF H, PARTIAL PRESSURE ON THE MORPHOLOGY AND CRYSTALLIZATION

July 2015

Silicon carbide layers have been produced by Chemical Vapor Deposition at low pressures (LPCVD) on g...

Chemical vapor deposition of SiC at different molar ratios of hydrogen to methyltrichlorosilane

Yang Yan
Zhang Wei-gang
Zhang, WG

October 2009

Chemical vapor deposition (CVD) of SiC from methyltrichlorosilane (NITS) was studied at two differen...

LPCVD of Sic layers in a hot-waH reactor using TMS precursor

E Henry
P. Marti
Y. Casaux
C. Combescure
A. Figueras
R. Rodriguez-clemente
A. Mazel
J. Sevely
B. Armas

December 2014

Sic polycrystalline layers were grown by LPCVD in a hot wall reactor using tetramethylsilane (TMS) d...

Effect of Low Pressure on Surface Roughness and Morphological Defects of 4H-SiC Epitaxial Layers

Jichao Hu

August 2016

In this work, 4H-SiC epilayers are performed on 4° off-axis substrates under low pressure condition ...

LPCVD of SiC layers in a hot-wall reactor using TMS precursor

F. HENRY
P. MARTI
Y. CASAUX
C. COMBESCURE
A. FIGUERAS
V. MADIGOU
R. RODRIGUEZ-CLEMENTE
A. MAZEL
J. SEVELY
B. ARMAS

January 1993

Sic polycrystalline layers were grown by LPCVD in a hot wall reactor using tetramethylsilane (TMS) d...

chemicalvapordepositionofsicatdifferentmolarratiosofhydrogentomethyltrichlorosilane

YANG Yan
ZHANG Weigang

January 2009

Chemical vapor deposition (CVD) of SiC from methyltrichlorosilane (NITS) was studied at two differen...

GAS PHASE REACTION IN SYNTHESIS OF SiC FILMS BY LOW PRESSURE CHEMICAL VAPOR DEPOSITION FROM Si2H6 AND C2H2 AT 873 K

L.-S. HONG
Y. SHIMOGAKI
H. KOMIYAMA

January 1991

Silicon carbide (SiC) films were synthesized by the low pressure chemical vapor deposition (LPCVD) m...

Influence of H2 Addition and Growth Temperature on CVD of SiC Using Hexamethyldisilane and Ar

N. Nordell
A S. Nishino
B J. -w. Yang
C. Jacob
P. Pirouz

September 2016

Growth of cubic SiC has been carried out on Si (111) and (100) substrates and on 6H-SiC Lely crystal...

Characterization of Buffer Layers for Sic CVD

V. Cimalla
J. Pezoldt
G. Ecke
H. Robler
G. Eichhorn

January 2015

Abstract: Silicon Carbide has been grown by rapid thermal carbonization of (1 00) and (1 1 1) Si sur...

Effect of Growth Pressure on Structural Properties of SiC Film Grown on Insulator by Utilizing Graphene as a Buffer Layer

Astuti, Budi
Abd Rahman, Shaharin Fadzli
Tanikawa, Masahiro
Mahmood, Mohamad Rusop
Yasui, Kanji
Manaf Hashim, Abdul

December 2022

Heteroepitaxial growth of silicon carbide (SiC) on graphene/SiO2/Si substrates was carried out using...

Influence of process pressure on HW-CVD deposited a-SiC : H films

SWAIN, BP

January 2006

Hydrogenated amorphous silicon carbon (a-SiC:H) films were deposited using pure SiH(4) and C(2)H(2) ...

MORPHOLOGICAL ASPECTS OF SILICON CARBIDE CHEMICALLY VAPOR-DEPOSITED ON GRAPHITE

A. PARRETTA
A. CAMANZI
G. GIUNTA
V. ADONCECCHI
P. ALESSANDRINI
A. MAZZARANO

The morphological features of silicon carbide coatings, deposited on graphite from SiCl4, C3H8 and H...

Influence of hydrogen dilution on the growth of nanocrystalline silicon carbide films by low-frequency inductively coupled plasma chemical vapor deposition

Cheng, Q.
Xu, S.
Chai, J.W.
Huang, S.Y.
Ren, Y.P.
Long, J.D.
Rutkevych, P.P.
Ostrikov, K.

January 2008

Nanocrystalline silicon carbide (nc-SiC) films are prepared by low-frequency inductively coupled pla...

Low pressure chemical vapor deposition (LPCVD) of silicon carbide from diethylsilane

Shi, Yi-Tong

August 1991

The depositions of amorphous and cubic-crystal SiC from a new chemical vapor deposition source, diet...

INFLUENCE OF H2 PARTIAL PRESSURE ON THE MORPHOLOGY AND CRYSTALLIZATION OF SiC LAYERS OBTAINED BY LPCVD USING TETRAMETHYLSILANE

A. FIGUERAS
R. RODRIGUEZ-CLEMENTE
S. GARELIK
J. SANTISO
B . ARMAS
C. COMBESCURE
A. MAZEL
Y. KIHN
J. SÉVELY

January 1991

Silicon carbide layers have been produced by Chemical Vapor Deposition at low pressures (LPCVD) on g...

INFLUENCE OF H, PARTIAL PRESSURE ON THE MORPHOLOGY AND CRYSTALLIZATION

July 2015

Silicon carbide layers have been produced by Chemical Vapor Deposition at low pressures (LPCVD) on g...

Chemical vapor deposition of SiC at different molar ratios of hydrogen to methyltrichlorosilane

Yang Yan
Zhang Wei-gang
Zhang, WG

October 2009

Chemical vapor deposition (CVD) of SiC from methyltrichlorosilane (NITS) was studied at two differen...

LPCVD of Sic layers in a hot-waH reactor using TMS precursor

E Henry
P. Marti
Y. Casaux
C. Combescure
A. Figueras
R. Rodriguez-clemente
A. Mazel
J. Sevely
B. Armas

December 2014

Sic polycrystalline layers were grown by LPCVD in a hot wall reactor using tetramethylsilane (TMS) d...

Effect of Low Pressure on Surface Roughness and Morphological Defects of 4H-SiC Epitaxial Layers

Jichao Hu

August 2016

In this work, 4H-SiC epilayers are performed on 4° off-axis substrates under low pressure condition ...

LPCVD of SiC layers in a hot-wall reactor using TMS precursor

F. HENRY
P. MARTI
Y. CASAUX
C. COMBESCURE
A. FIGUERAS
V. MADIGOU
R. RODRIGUEZ-CLEMENTE
A. MAZEL
J. SEVELY
B. ARMAS

January 1993

Sic polycrystalline layers were grown by LPCVD in a hot wall reactor using tetramethylsilane (TMS) d...

chemicalvapordepositionofsicatdifferentmolarratiosofhydrogentomethyltrichlorosilane

YANG Yan
ZHANG Weigang

January 2009

Chemical vapor deposition (CVD) of SiC from methyltrichlorosilane (NITS) was studied at two differen...

GAS PHASE REACTION IN SYNTHESIS OF SiC FILMS BY LOW PRESSURE CHEMICAL VAPOR DEPOSITION FROM Si2H6 AND C2H2 AT 873 K

L.-S. HONG
Y. SHIMOGAKI
H. KOMIYAMA

January 1991

Silicon carbide (SiC) films were synthesized by the low pressure chemical vapor deposition (LPCVD) m...

Influence of H2 Addition and Growth Temperature on CVD of SiC Using Hexamethyldisilane and Ar

N. Nordell
A S. Nishino
B J. -w. Yang
C. Jacob
P. Pirouz

September 2016

Growth of cubic SiC has been carried out on Si (111) and (100) substrates and on 6H-SiC Lely crystal...

Characterization of Buffer Layers for Sic CVD

V. Cimalla
J. Pezoldt
G. Ecke
H. Robler
G. Eichhorn

January 2015

Abstract: Silicon Carbide has been grown by rapid thermal carbonization of (1 00) and (1 1 1) Si sur...

Effect of Growth Pressure on Structural Properties of SiC Film Grown on Insulator by Utilizing Graphene as a Buffer Layer

Astuti, Budi
Abd Rahman, Shaharin Fadzli
Tanikawa, Masahiro
Mahmood, Mohamad Rusop
Yasui, Kanji
Manaf Hashim, Abdul

December 2022

Heteroepitaxial growth of silicon carbide (SiC) on graphene/SiO2/Si substrates was carried out using...

Influence of process pressure on HW-CVD deposited a-SiC : H films

SWAIN, BP

January 2006

Hydrogenated amorphous silicon carbon (a-SiC:H) films were deposited using pure SiH(4) and C(2)H(2) ...

MORPHOLOGICAL ASPECTS OF SILICON CARBIDE CHEMICALLY VAPOR-DEPOSITED ON GRAPHITE

A. PARRETTA
A. CAMANZI
G. GIUNTA
V. ADONCECCHI
P. ALESSANDRINI
A. MAZZARANO

The morphological features of silicon carbide coatings, deposited on graphite from SiCl4, C3H8 and H...

Influence of hydrogen dilution on the growth of nanocrystalline silicon carbide films by low-frequency inductively coupled plasma chemical vapor deposition

Cheng, Q.
Xu, S.
Chai, J.W.
Huang, S.Y.
Ren, Y.P.
Long, J.D.
Rutkevych, P.P.
Ostrikov, K.

January 2008

Nanocrystalline silicon carbide (nc-SiC) films are prepared by low-frequency inductively coupled pla...

Low pressure chemical vapor deposition (LPCVD) of silicon carbide from diethylsilane

Shi, Yi-Tong

August 1991

The depositions of amorphous and cubic-crystal SiC from a new chemical vapor deposition source, diet...

INFLUENCE OF H2 PARTIAL PRESSURE ON THE MORPHOLOGY AND CRYSTALLIZATION OF SiC LAYERS OBTAINED BY LPCVD USING TETRAMETHYLSILANE

Abstract

Extracted data

INFLUENCE OF H2 PARTIAL PRESSURE ON THE MORPHOLOGY AND CRYSTALLIZATION OF SiC LAYERS OBTAINED BY LPCVD USING TETRAMETHYLSILANE

Abstract

Extracted data

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