The influence of a stacking fault on planar channeling of charged particles is described. A channelon reaching the stacking fault suffers a sudden variation of its transverse energy, and is dechanneled if this new energy is greater than the critical one. The probability of presence of the channelon between two ordinates where this condition is fulfilled has to be determined. This probability depends on the particle-atom minimal approach distance, which can thus be measured by a dechanneling experiment. A complete calculation has been carried out for α channelons which move along { 111 } planes in gold containing intrinsic stacking faults. The calculated dechanneling coefficient Γ is, for different minimal approach distances d a : [FORMULA] ...
Under coherent interactions, particles undergo correlated collisions with the crystal lattice and th...
α particles emitted from an isotropic source and traversing a metallic foil of adequate thickness, p...
AbstractChanneling in a short bent silicon crystal was investigated at the CERN SPS using 400-GeV/c ...
We have investigated the channeling process of charged particles in a bent crystal. Invoking simple ...
Abstract A refined equation for channeling particle diffusion in transverse energy taking into consi...
A new method for determining planar continuum potentials from planar channeling data has been develo...
Charged particles entering a crystal close to some preferred direction can be trapped in the electro...
We studied the dechanneling length of 150 GeV/c@p^- interacting with a short bent silicon crystal. D...
The channeling of heavy particles is disturbed by crystal defects and may even attain dechanneling. ...
Deflection of 400 GeV/c protons by a short bent silicon crystal was studied at the CERN SPS. It was ...
Particles passing through a crystal under planar channeling are captured by a continuous potential a...
Bent crystals have demonstrated potential for use in beam collimation. A process called channeling i...
AbstractDeflection of 400 GeV/c protons by a short bent silicon crystal was studied at the CERN SPS....
The dechanneling yield of alpha particles by hydrogen atoms dissolved in palladium has been measured...
While information exists on high energy negative particle channeling there has been little study of ...
Under coherent interactions, particles undergo correlated collisions with the crystal lattice and th...
α particles emitted from an isotropic source and traversing a metallic foil of adequate thickness, p...
AbstractChanneling in a short bent silicon crystal was investigated at the CERN SPS using 400-GeV/c ...
We have investigated the channeling process of charged particles in a bent crystal. Invoking simple ...
Abstract A refined equation for channeling particle diffusion in transverse energy taking into consi...
A new method for determining planar continuum potentials from planar channeling data has been develo...
Charged particles entering a crystal close to some preferred direction can be trapped in the electro...
We studied the dechanneling length of 150 GeV/c@p^- interacting with a short bent silicon crystal. D...
The channeling of heavy particles is disturbed by crystal defects and may even attain dechanneling. ...
Deflection of 400 GeV/c protons by a short bent silicon crystal was studied at the CERN SPS. It was ...
Particles passing through a crystal under planar channeling are captured by a continuous potential a...
Bent crystals have demonstrated potential for use in beam collimation. A process called channeling i...
AbstractDeflection of 400 GeV/c protons by a short bent silicon crystal was studied at the CERN SPS....
The dechanneling yield of alpha particles by hydrogen atoms dissolved in palladium has been measured...
While information exists on high energy negative particle channeling there has been little study of ...
Under coherent interactions, particles undergo correlated collisions with the crystal lattice and th...
α particles emitted from an isotropic source and traversing a metallic foil of adequate thickness, p...
AbstractChanneling in a short bent silicon crystal was investigated at the CERN SPS using 400-GeV/c ...