A numerical method is used to resolve transport equations in dielectrics. A model with electrons, holes and impurities is described. Boundary conditions and recombination are discussed. I = f (v) characteristics, potential and carrier distributions on a sample with impurities are described.Une méthode numérique permettant de résoudre les équations de transport dans les diélectriques est présentée. On étudie un modèle avec électrons, trous et impuretés. On discute les conditions aux limites, la recombinaison. On donne les caractéristiques I = f(v), les distributions de potentiel et de porteurs pour un échantillon avec impuretés
Les matériaux diélectriques sont présents dans de nombreux dispositifs en microélectronique. Ces der...
International audienceIn this paper, we present a new numerical formulation that we have applied to ...
The contribution is mainly related to advanced problems in Monte Carlo simulations. The first sectio...
A numerical method for computing the carrier and field distributions has been used to simulate the t...
Time dependent phenomena in dielectrics have been simulated by computing the electric charges, poten...
A model of a dielectric in which the charge carriers are electrons and holes is considered. The flow...
In this paper the model of solid dielectric is presented, in which the space-charge is formed by fre...
Excess charge carrier transport and relaxation in semiconductor layered structures have been numeric...
Excess charge carrier transport and relaxation in semiconductor layered structures have been numeric...
International audienceConduction models in disordered materials are described, with a special focus ...
Transport of free positive charge carriers and of trapped negative charge carriers in a model dielec...
In this model system there is presented t,he electric conduction with three mobilities of carriers w...
Electric conduction in a dielectric with deep traps is analysed. The space charge is made up of free...
Localized impurities doped in the semiconductor substrate of nanostructure devices play an essential...
Dielectric materials can be found in numerous devices in microelectronics. They can be subjected to ...
Les matériaux diélectriques sont présents dans de nombreux dispositifs en microélectronique. Ces der...
International audienceIn this paper, we present a new numerical formulation that we have applied to ...
The contribution is mainly related to advanced problems in Monte Carlo simulations. The first sectio...
A numerical method for computing the carrier and field distributions has been used to simulate the t...
Time dependent phenomena in dielectrics have been simulated by computing the electric charges, poten...
A model of a dielectric in which the charge carriers are electrons and holes is considered. The flow...
In this paper the model of solid dielectric is presented, in which the space-charge is formed by fre...
Excess charge carrier transport and relaxation in semiconductor layered structures have been numeric...
Excess charge carrier transport and relaxation in semiconductor layered structures have been numeric...
International audienceConduction models in disordered materials are described, with a special focus ...
Transport of free positive charge carriers and of trapped negative charge carriers in a model dielec...
In this model system there is presented t,he electric conduction with three mobilities of carriers w...
Electric conduction in a dielectric with deep traps is analysed. The space charge is made up of free...
Localized impurities doped in the semiconductor substrate of nanostructure devices play an essential...
Dielectric materials can be found in numerous devices in microelectronics. They can be subjected to ...
Les matériaux diélectriques sont présents dans de nombreux dispositifs en microélectronique. Ces der...
International audienceIn this paper, we present a new numerical formulation that we have applied to ...
The contribution is mainly related to advanced problems in Monte Carlo simulations. The first sectio...