The observation of transmission spectra in the infrared (2 to 16 μ) gives a sensitive and non-destructive technique for the identification of silicon oxides, even in very thin films (< 1 μ) deposited on a silicon substrate. We have studied such films of oxides formed or deposited by various procedures on a monocrystalline silicon substrate. For layers prepared by evaporation of SiO, the relationship of the spectra to the preparation conditions and thermal treatments in an oxygen atmosphere has been investigated : the maximum of the absorption coefficient in the band located between 9 and 10 μ is displaced as a function of the oxygen to silicon ratio. The spectra of anodic oxides have been found to depend upon the water content of the electr...
SiOx thin films with different stoichiometries from SiO1.3 to SiO1.8 have been prepared by evaporati...
The Si-H and Si-N vibration modes contributions to IR absorption bands in the wave number range of 6...
Silicon dioxide films were grown in oxygen ambient under negative corona stress at low temperatures ...
This work concerns a study of silicon dioxide obtained by low température plasma assisted oxidation ...
Thin films of nonstoichiometric silicon oxide (SiOx with x < 2) have been studied extensively dur...
Abstract. Silicon oxide and hydrogen are ubiquitous in materials and processing issues in microelect...
Using the chemical reaction between silicone oil vapor and ozone gas at atmospheric pressure and abo...
Oxygen precipitation in the bulk of silicon wafers was investigated by using micro‐Fourier transform...
X-ray photoelectron spectroscopy, high resolution cross-sectional transmission electron microscopy (...
Oxygen content in the bulk of Czochralski silicon was analyzed by using micro‐Fourier transform infr...
Insight into the oxidation mechanism of microcrystalline silicon thin films has been obtained by mea...
Amorphous silicon dioxide and aluminum oxide films are being considered by NASA for application on l...
L'étude du spectre de transmission dans l'infrarouge (2 à 16 μ) fournit une méthode sensible et non ...
Hamelmann F, Heinzmann U, Szekeres A, Kirov N, Nikolova T. Deposition of silicon oxide thin films in...
A single chamber system for plasma-enhanced chemical vapor deposition was employed to deposit differ...
SiOx thin films with different stoichiometries from SiO1.3 to SiO1.8 have been prepared by evaporati...
The Si-H and Si-N vibration modes contributions to IR absorption bands in the wave number range of 6...
Silicon dioxide films were grown in oxygen ambient under negative corona stress at low temperatures ...
This work concerns a study of silicon dioxide obtained by low température plasma assisted oxidation ...
Thin films of nonstoichiometric silicon oxide (SiOx with x < 2) have been studied extensively dur...
Abstract. Silicon oxide and hydrogen are ubiquitous in materials and processing issues in microelect...
Using the chemical reaction between silicone oil vapor and ozone gas at atmospheric pressure and abo...
Oxygen precipitation in the bulk of silicon wafers was investigated by using micro‐Fourier transform...
X-ray photoelectron spectroscopy, high resolution cross-sectional transmission electron microscopy (...
Oxygen content in the bulk of Czochralski silicon was analyzed by using micro‐Fourier transform infr...
Insight into the oxidation mechanism of microcrystalline silicon thin films has been obtained by mea...
Amorphous silicon dioxide and aluminum oxide films are being considered by NASA for application on l...
L'étude du spectre de transmission dans l'infrarouge (2 à 16 μ) fournit une méthode sensible et non ...
Hamelmann F, Heinzmann U, Szekeres A, Kirov N, Nikolova T. Deposition of silicon oxide thin films in...
A single chamber system for plasma-enhanced chemical vapor deposition was employed to deposit differ...
SiOx thin films with different stoichiometries from SiO1.3 to SiO1.8 have been prepared by evaporati...
The Si-H and Si-N vibration modes contributions to IR absorption bands in the wave number range of 6...
Silicon dioxide films were grown in oxygen ambient under negative corona stress at low temperatures ...