On a mesuré la phase du signal photoacoustique pour du Si amorphe obtenu par implantation ionique et évaporé. La détermination de la conductivité thermique est obtenue par le modèle à deux couches.We have measured photoacoustic-signal phase of ion implanted and evaporated Si. The values of thermal conductivity of amorphous layers have been determined by a two layer theoretical model
On développe un modèle de croissance d'une phase ordonnée basé sur la diffusion des lacunes thermiqu...
In this paper we review some of the techniques based on the photoconductivity property of hydrogenat...
Original experimental data for the temperature dependence of the Raman shift in silicon and gallium ...
The photoacoustic technique has been used to characterize ion implanted Si layers, as a function of ...
The activation energy of amorphous silicon thin lms are usually measured by placing the thin lm samp...
An open-cell configuration of the photoacoustic (PA) technique is employed to determine the thermal ...
Thermal diffusivity (TD) of p-Si and Ag/p-Si samples were measured by photoacoustic technique using ...
The use of the photoacoustic technique to monitor the thermal properties of materials that can be ob...
Amorphous silicon (a-Si) thin film material is widely used in liquid crystal display and solar cell ...
Thermal, elastic and electronic transport properties of ion-modified silicon samples were investigat...
International audienceIn this paper the results of an experimental study of heat transport peculiari...
The effects of Ar+8 and O+6 ion implantation of Si were investigated by photoacoustic (PA) and photo...
Résumé – Une simulation numérique de la conductivité thermiquement stimulée (TSC) en fonction de la ...
The thickness of thin porous layers of silicon samples and their varying porosity have been determin...
This paper presents the results of photoacoustic studies of porous silicon layers formed on silicon...
On développe un modèle de croissance d'une phase ordonnée basé sur la diffusion des lacunes thermiqu...
In this paper we review some of the techniques based on the photoconductivity property of hydrogenat...
Original experimental data for the temperature dependence of the Raman shift in silicon and gallium ...
The photoacoustic technique has been used to characterize ion implanted Si layers, as a function of ...
The activation energy of amorphous silicon thin lms are usually measured by placing the thin lm samp...
An open-cell configuration of the photoacoustic (PA) technique is employed to determine the thermal ...
Thermal diffusivity (TD) of p-Si and Ag/p-Si samples were measured by photoacoustic technique using ...
The use of the photoacoustic technique to monitor the thermal properties of materials that can be ob...
Amorphous silicon (a-Si) thin film material is widely used in liquid crystal display and solar cell ...
Thermal, elastic and electronic transport properties of ion-modified silicon samples were investigat...
International audienceIn this paper the results of an experimental study of heat transport peculiari...
The effects of Ar+8 and O+6 ion implantation of Si were investigated by photoacoustic (PA) and photo...
Résumé – Une simulation numérique de la conductivité thermiquement stimulée (TSC) en fonction de la ...
The thickness of thin porous layers of silicon samples and their varying porosity have been determin...
This paper presents the results of photoacoustic studies of porous silicon layers formed on silicon...
On développe un modèle de croissance d'une phase ordonnée basé sur la diffusion des lacunes thermiqu...
In this paper we review some of the techniques based on the photoconductivity property of hydrogenat...
Original experimental data for the temperature dependence of the Raman shift in silicon and gallium ...
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