We study both theoretically and experimentally the luminescence in non-intentionally but heavily p-doped GaAs quantum wells of 55 and 150A width. At T=2K the PL spectra under cw excitation present an excitonic peak and a broad acceptor band. Time-resolved optical pumping of the acceptor line allows us to measure the free electron spin relaxation time. We have investigated its temperature dependence in the 4-40K range. The experimental findings are interpreted in the framework of the D'Yakonov-Perel' mechanism for the electron gas
Strong spin polarization has been observed for localized excitons in GaAs/AlGaAs symmetrical double ...
Growth, photoluminescence characterisation and time-resolved optical measurements of electron spin d...
Exciton luminescence polarization studies in semiconductor quantum wells have revealed the coexisten...
Abstract: We study both theoretically and experimental1 the luminescence in non-intentionally but he...
Carrier spin dynamics have been investigated in Type I gallium arsenide/aluminium gallium arsenide q...
We have made a systematic investigation of spin relaxation and related phenomena in type l GaAs-AlxG...
We have studied the temperature dependence of the spin-flip processes of electrons in p-type mod-ula...
We present a detailed experimental and theoretical analysis of the spin dynamics of two-dimensional ...
We have studied the temperature dependence of the spin-flip processes of electrons in p-type mod-ula...
We have used time-resolved optical techniques to investigate the spin and phase relaxation and quant...
We review some of the newest findings on the spin dynamics of carriers and excitons in GaAs/GaAlAs q...
Recent experiments have demonstrated long spin lifetimes in uniformly n-doped quantum wells. The spi...
We present a detailed experimental and theoretical analysis of the spin dynamics of two-dimensional ...
Recent and ongoing optical experiments on mechanisms and methods for control and gating of spin rela...
Recent experiments have demonstrated long spin lifetimes in uniformly n-doped quantum wells. The spi...
Strong spin polarization has been observed for localized excitons in GaAs/AlGaAs symmetrical double ...
Growth, photoluminescence characterisation and time-resolved optical measurements of electron spin d...
Exciton luminescence polarization studies in semiconductor quantum wells have revealed the coexisten...
Abstract: We study both theoretically and experimental1 the luminescence in non-intentionally but he...
Carrier spin dynamics have been investigated in Type I gallium arsenide/aluminium gallium arsenide q...
We have made a systematic investigation of spin relaxation and related phenomena in type l GaAs-AlxG...
We have studied the temperature dependence of the spin-flip processes of electrons in p-type mod-ula...
We present a detailed experimental and theoretical analysis of the spin dynamics of two-dimensional ...
We have studied the temperature dependence of the spin-flip processes of electrons in p-type mod-ula...
We have used time-resolved optical techniques to investigate the spin and phase relaxation and quant...
We review some of the newest findings on the spin dynamics of carriers and excitons in GaAs/GaAlAs q...
Recent experiments have demonstrated long spin lifetimes in uniformly n-doped quantum wells. The spi...
We present a detailed experimental and theoretical analysis of the spin dynamics of two-dimensional ...
Recent and ongoing optical experiments on mechanisms and methods for control and gating of spin rela...
Recent experiments have demonstrated long spin lifetimes in uniformly n-doped quantum wells. The spi...
Strong spin polarization has been observed for localized excitons in GaAs/AlGaAs symmetrical double ...
Growth, photoluminescence characterisation and time-resolved optical measurements of electron spin d...
Exciton luminescence polarization studies in semiconductor quantum wells have revealed the coexisten...