Time-resolved luminescence experiments have been carried out in a-Si : H. The results are interpreted on the basis of a model calculation in which radiative recombination of trapped electron-hole pairs is taken into account as well as nonradiative recombination at dangling bond centres
A new microscopic and kinetic model of light-induced metastability in hydrogenated amorphous silicon...
We have investigated the temperature dependence of photoluminescence in hydrogenated amorphous sili...
The effects of prolonged illumination and subsequent thermal treatment, on the valence band density ...
Dangling bonds, as observed in ESR, act as both radiative and non-radiative recombination centers in...
We report a more detailed understanding of the thermal-quenching and sensitization processes in tetr...
A study has been carried out on the evolution of light induced defects in protocrystalline (diluted)...
We present evidence for defect creation by prolonged laser light irradiation at low temperatures in ...
Bulk recombination of photogenerated carriers is studied by transient photocurrent measurements in p...
The effects of microstructure on the gap states of hydrogen diluted and undiluted hydrogenated amorp...
International audienceThe effects of microstructure on the gap states of hydrogen diluted and undilu...
A model of thermal relaxation within localized states based on the extended multiple trapping frame...
A general and straightforward analytical expression for the defect-state-energy distribution of a-Si...
In this manuscript,it was investigated that the mechanism of recombinational processes in the film o...
Abstract- In this paper, we report on the simulation of steady state photoconductivity in un-doped a...
The influence of pulsed bias light excitation on the absorption in the defect region of undoped a-Si...
A new microscopic and kinetic model of light-induced metastability in hydrogenated amorphous silicon...
We have investigated the temperature dependence of photoluminescence in hydrogenated amorphous sili...
The effects of prolonged illumination and subsequent thermal treatment, on the valence band density ...
Dangling bonds, as observed in ESR, act as both radiative and non-radiative recombination centers in...
We report a more detailed understanding of the thermal-quenching and sensitization processes in tetr...
A study has been carried out on the evolution of light induced defects in protocrystalline (diluted)...
We present evidence for defect creation by prolonged laser light irradiation at low temperatures in ...
Bulk recombination of photogenerated carriers is studied by transient photocurrent measurements in p...
The effects of microstructure on the gap states of hydrogen diluted and undiluted hydrogenated amorp...
International audienceThe effects of microstructure on the gap states of hydrogen diluted and undilu...
A model of thermal relaxation within localized states based on the extended multiple trapping frame...
A general and straightforward analytical expression for the defect-state-energy distribution of a-Si...
In this manuscript,it was investigated that the mechanism of recombinational processes in the film o...
Abstract- In this paper, we report on the simulation of steady state photoconductivity in un-doped a...
The influence of pulsed bias light excitation on the absorption in the defect region of undoped a-Si...
A new microscopic and kinetic model of light-induced metastability in hydrogenated amorphous silicon...
We have investigated the temperature dependence of photoluminescence in hydrogenated amorphous sili...
The effects of prolonged illumination and subsequent thermal treatment, on the valence band density ...
DOI
Add to ORKG