A charge-control type model, based on the macroscopic theory of the diffusion, and using the energy band diagram proposed by Anderson, is presented. This model accounts for the more or less gradual change of the gap at the junction and allows to present the current variation law with the applied voltage under a compact analytical form. The typical parameters of this model are given as a function of the technological and geometrical characteristics of the junction.Dans le cadre de la théorie macroscopique de la diffusion et à partir du diagramme des bandes d'énergie proposé par Anderson, un modèle « à contrôle de la charge » est établi. Celui-ci prend en compte le caractère plus ou moins graduel du changement de largeur de bande interdite à ...
The dependence of the electron beam induced current (EBIC) collection efficiency ηCC on the electron...
AbstractKramers’ diffusion theory of reaction rates in the condensed phase is considered as an alter...
A one-dimensional drift-diffusion model, including energy balance equations, is used to model Schott...
The physical processes occurring in junctions and weak links are encoded in their I–V characteristic...
Semiconductor device modeling is very classic. In this thesis, the state-of-the-art is recall. Then ...
A theoretical analysis of the voltage-current relationship is carried out in a membrane consisting o...
The objective of this project is to develop power diode models for use in circuit simulation. The mo...
The development of OLED devices for display or lighting applications usually needs a long and costly...
A comprehensive analytic model describing current flow in the MIS tunnel junction under steady-state...
A study which deals with the dispersion of electric charges driven by a flow of gas has been carrie...
In addition, the authors discuss the charge distribution conditions in the depleted region of a line...
A model is proposed for the description of the current instabilities in GaAs-AlGaAs heterojunctions....
In this paper a general method for modelling power electronics circuits associated with electromagne...
We present a model of the metal–semiconductor junction, for heavily doped GaAs, so that tunneling do...
The lumped-charge (LC) technique is widely used to develop simple and physically based power device ...
The dependence of the electron beam induced current (EBIC) collection efficiency ηCC on the electron...
AbstractKramers’ diffusion theory of reaction rates in the condensed phase is considered as an alter...
A one-dimensional drift-diffusion model, including energy balance equations, is used to model Schott...
The physical processes occurring in junctions and weak links are encoded in their I–V characteristic...
Semiconductor device modeling is very classic. In this thesis, the state-of-the-art is recall. Then ...
A theoretical analysis of the voltage-current relationship is carried out in a membrane consisting o...
The objective of this project is to develop power diode models for use in circuit simulation. The mo...
The development of OLED devices for display or lighting applications usually needs a long and costly...
A comprehensive analytic model describing current flow in the MIS tunnel junction under steady-state...
A study which deals with the dispersion of electric charges driven by a flow of gas has been carrie...
In addition, the authors discuss the charge distribution conditions in the depleted region of a line...
A model is proposed for the description of the current instabilities in GaAs-AlGaAs heterojunctions....
In this paper a general method for modelling power electronics circuits associated with electromagne...
We present a model of the metal–semiconductor junction, for heavily doped GaAs, so that tunneling do...
The lumped-charge (LC) technique is widely used to develop simple and physically based power device ...
The dependence of the electron beam induced current (EBIC) collection efficiency ηCC on the electron...
AbstractKramers’ diffusion theory of reaction rates in the condensed phase is considered as an alter...
A one-dimensional drift-diffusion model, including energy balance equations, is used to model Schott...