Preparation and properties of the (Sr,Ba)Nb

Strontium barium niobate (Sr0.3Ba0.7Nb2O6, SBN) thin films were deposited on silicon substrate by using the radio frequency magnetron sputtering and under different deposition power and time at room temperature. Surface morphology and thicknesses of the SBN thin films were characterized by field emission scanning electron microscopy. The crystallization films at different deposition power and time were analyzed by X-ray diffraction (XRD) using CuKα radiation from a Rigaku rotating anode with an incident angle of 2°. The remnant polarization (Pr), saturation polarization (Ps), and minimum coercive field (Ec) properties of the metal-ferroelectric-metal (MFM) structure were measured using ferroelectric material test instrument. The SBN thin films deposited at 90 min and 125 W had the maximum Pr, Ps, and minimum Ec of 1.26 μC/cm2, 2.41 μC/cm2, and 201.6 kV/cm, respectively. From above results, it knows that the SBN thin films suit for application on ferroelectric random access memory (FeRAM)