The effect of

Resistive random access memory (RRAM) is recognized as a promising candidate for the next generation of non-volatile memory devices. In this work, the effect of γ-rays irradiation on WOx-based RRAM devices is investigated. The basic device parameters including high resistance, low resistance, set voltage, and reset voltage show high uniformity with a total dose as high as 500 krad(Si). Furthermore, the retention of 104 s can be achieved after irradiation, and the static resistances are also tested and compared. The highly uniformity after γ-rays irradiation provides the WOx-based RRAM devices with great potential for applications