Structural properties of epitaxial YSZ and doped CeO2 films on different substrates prepared by liquid sources MOCVD (LSMOCVD)

With LSMOCVD it is possible to deposit reproducibly oxide films without need for high vacuum systems. On in-plane aligned oxide and metallic substrates epitaxial film growth takes place. Film morphology, interface layers and surface roughness can be controlled by choice of deposition parameters like temperature, gas phase composition and mass flow. The layers were characterized by SEM, AFM and texture analysis. Yttria-stabilized zirconia (YSZ), ceria and ceria doped with Gadolinium are prepared and the dependence of film properties on deposition parameters is investigated. The suitability of these films for the use of buffer layers in YBCO-deposition is discussed