Atomic configurations of cleaved GaAs (110) surfaces are analysed to check existing models of cleavage and step formation in solids. Morphologies of $1\;\mu{\rm m}^2$ were investigated in UHV at 300 K with a Scanning Tunneling Microscope and compared to Monte Carlo simulations. The analysis supports the view that the processes involved in fracture are far from thermal equilibrium. Two characteristic length scales are found in the morphologies. Mean terrace widths of 10 nm and large-scale fluctuations of 100 nm both point to non-linear lattice dynamic instabilities which occur during crack propagation
Scanning tunnelling microscopy has been used to investigate dislocation-induced surface morphologica...
[[abstract]]In this article scanning tunneling microscopy studies of atomic motion of defects on the...
The GaAs(112)A and B surfaces were prepared by molecular beam epitaxy (MBE) and characterized in sit...
Abstract—GaAs–AlAs superlattices with periodicities of up to 200 nm were cleaved to expose (110) fac...
The morphological evolution of GaAs (001) is studied during growth and equilibrium using several exp...
The growth process of small self-interstitial clusters In (n≤7) in crystalline GaAs has been address...
Examples are shown that illustrate rapid changes that can take place while a thin foil specimen is u...
The main structural microdefects in GaAs are point defects (native defects, dopants), dislocations, ...
We demonstrate that the presence of dopant atoms influences the roughness, morphology, and optical m...
GaAs is brittle at room temperature at the macro-scale; however, ductility emerges when its characte...
Laser bars are fast becoming a key device in a range of specific industrial applications. Mechanical...
When a brittle material is loaded to the limit of its strength, it fails by the nucleation and propa...
We studied the transition process of antisite arsenic defects in Be-doped low-temperature-grown GaA...
When a brittle material is loaded to the limit of its strength, it fails by the nucleation and propa...
The purpose of this research was to determine which dislocation mechanisms were the most important i...
Scanning tunnelling microscopy has been used to investigate dislocation-induced surface morphologica...
[[abstract]]In this article scanning tunneling microscopy studies of atomic motion of defects on the...
The GaAs(112)A and B surfaces were prepared by molecular beam epitaxy (MBE) and characterized in sit...
Abstract—GaAs–AlAs superlattices with periodicities of up to 200 nm were cleaved to expose (110) fac...
The morphological evolution of GaAs (001) is studied during growth and equilibrium using several exp...
The growth process of small self-interstitial clusters In (n≤7) in crystalline GaAs has been address...
Examples are shown that illustrate rapid changes that can take place while a thin foil specimen is u...
The main structural microdefects in GaAs are point defects (native defects, dopants), dislocations, ...
We demonstrate that the presence of dopant atoms influences the roughness, morphology, and optical m...
GaAs is brittle at room temperature at the macro-scale; however, ductility emerges when its characte...
Laser bars are fast becoming a key device in a range of specific industrial applications. Mechanical...
When a brittle material is loaded to the limit of its strength, it fails by the nucleation and propa...
We studied the transition process of antisite arsenic defects in Be-doped low-temperature-grown GaA...
When a brittle material is loaded to the limit of its strength, it fails by the nucleation and propa...
The purpose of this research was to determine which dislocation mechanisms were the most important i...
Scanning tunnelling microscopy has been used to investigate dislocation-induced surface morphologica...
[[abstract]]In this article scanning tunneling microscopy studies of atomic motion of defects on the...
The GaAs(112)A and B surfaces were prepared by molecular beam epitaxy (MBE) and characterized in sit...