Transport signatures of correlated disorder in a two-dimensional electron gas

We report electronic transport measurements on two-dimensional electron gases in a $\chem{Ga[Al]As}$ heterostructure with an embedded layer of $\chem{InAs}$ self-assembled quantum dots. At high $\chem{InAs}$ dot densities, pronounced Altshuler-Aronov-Spivak magnetoresistance oscillations are observed, which indicate short-range ordering of the potential landscape formed by the charged dots and the strain fields. The presence of these oscillations coincides with the observation of a metal-insulator transition, and a maximum in the electron mobility as a function of the electron density. Within a model based on correlated disorder, we establish a relation between these effects