Structural properties of Ge/Si(001) nano-islands by diffraction anomalous fine structure and multiwavelength anomalous diffraction

In the present paper, we aim to show the interest of combining Multiwavelength Anomalous Diffraction (MAD) and Diffraction Anomalous Fine Structure (DAFS) spectroscopy, in grazing incidence, to obtain structural properties (composition, strain and atomic ordering) of semiconductor heterostructures and nanostructures. As an example we report on preliminary results obtained on a series of Ge/Si(001) nano-island samples: pyramides and domes on nominal and prepatterned surfaces. For free standing domes, it is shown that the Ge content strongly depends on the growth condition with a tendency to increase from the bottom to the top of the nano-islands. There is also some indication of atomic ordering in the upper part of the islands. For small, capped pyramids, we show that the Diffraction Anomalous Fine Structure spectroscopy is the unique non destructive method that allows to recover the actual Ge content, the in-plane and out-of-plane strain and to detect atomic ordering