Scanning transmission ion microscopy (STIM) has been applied to measure sputter yields of thin Kovar foil. The results have been found in very good agreement with values determined by the weight loss method, demonstrating STIM as a feasible alternative measurement technique for sputter yield estimation of thin material samples. Measurements have been carried out under normal xenon ion incidence for ion energies in the range between 100 eV and 1000 eV. In addition, sputter yields of Kovar bulk samples are reported. The data might be interesting for ion beam applications such as solar electric propulsion, in which materials with low sputter yields are preferred to ensure a long operational lifetime of the system components
We have measured the yields of 90 keV ^(40)Ar^+ and ^4He^+ sputtering of Mo and V samples by the use...
We have measured the yields of 90 keV ^(40)Ar^+ and ^4He^+ sputtering of Mo and V samples by the use...
We have measured the yields of 90 keV ^(40)Ar^+ and ^4He^+ sputtering of Mo and V samples by the use...
In this paper, we describe a technique that was used to measure total and differential sputter yield...
International audienceAn innovative experimental equipment allowing to study the sputtering induced ...
International audienceAn innovative experimental equipment allowing to study the sputtering induced ...
International audienceAn innovative experimental equipment allowing to study the sputtering induced ...
International audienceAn innovative experimental equipment allowing to study the sputtering induced ...
International audienceAn innovative experimental equipment allowing to study the sputtering induced ...
The sputter yield is an important material parameter not only for various surface treatment techniq...
Specific laboratory testing equipment, which allows studying the Sputtering behavior of Electric Pro...
A quantitative method is described for measuring the sputtered depth profile of an ion beam and calc...
The use of thin, self-supporting carbon catcher foils allows one to measure sputtering yields in a b...
The use of thin, self-supporting carbon catcher foils allows one to measure sputtering yields in a b...
The use of thin, self-supporting carbon catcher foils allows one to measure sputtering yields in a b...
We have measured the yields of 90 keV ^(40)Ar^+ and ^4He^+ sputtering of Mo and V samples by the use...
We have measured the yields of 90 keV ^(40)Ar^+ and ^4He^+ sputtering of Mo and V samples by the use...
We have measured the yields of 90 keV ^(40)Ar^+ and ^4He^+ sputtering of Mo and V samples by the use...
In this paper, we describe a technique that was used to measure total and differential sputter yield...
International audienceAn innovative experimental equipment allowing to study the sputtering induced ...
International audienceAn innovative experimental equipment allowing to study the sputtering induced ...
International audienceAn innovative experimental equipment allowing to study the sputtering induced ...
International audienceAn innovative experimental equipment allowing to study the sputtering induced ...
International audienceAn innovative experimental equipment allowing to study the sputtering induced ...
The sputter yield is an important material parameter not only for various surface treatment techniq...
Specific laboratory testing equipment, which allows studying the Sputtering behavior of Electric Pro...
A quantitative method is described for measuring the sputtered depth profile of an ion beam and calc...
The use of thin, self-supporting carbon catcher foils allows one to measure sputtering yields in a b...
The use of thin, self-supporting carbon catcher foils allows one to measure sputtering yields in a b...
The use of thin, self-supporting carbon catcher foils allows one to measure sputtering yields in a b...
We have measured the yields of 90 keV ^(40)Ar^+ and ^4He^+ sputtering of Mo and V samples by the use...
We have measured the yields of 90 keV ^(40)Ar^+ and ^4He^+ sputtering of Mo and V samples by the use...
We have measured the yields of 90 keV ^(40)Ar^+ and ^4He^+ sputtering of Mo and V samples by the use...