Resonant photoluminescence experiments performed on self-assembled InAs/GaAs quantum dots under strong magnetic field up to 28 T give rise to an accurate determination of the interband magneto-optical transitions. As this technique minimizes the effect of the homogeneous broadening of the transitions due to the size and composition fluctuations of the dots, the experimental spectra display well-defined peaks. A good agreement is found between the experimental data and calculations using an effective mass model including the coupling between the mixed exciton-LO phonon states. Transitions involving excitonic polarons are clearly identified. Moreover, a light-hole to conduction transition is also evidenced in agreement with previous theoretic...
We present the first radiative lifetime measurements and magneto-photoluminescence results of excite...
A set of self-assembled InAs/GaAs quantum dot (QD) samples annealed at various temperatures for 30 ...
We report on the optical properties of single InAs/GaAs quantum dots emitting near the telecommunica...
International audienceResonant photoluminescence experiments performed on self-assembled InAs/GaAs q...
Magneto-photoluminescence of single- and multi-layered self- organised MOCVD grown InAs quantum dot...
We investigate the interband transitions in several ensembles of self-assembled InAs/GaAs quantum do...
We report on the magneto-optical evidence and theoretical modelling of polaron effects in self-asse...
We report on high-excitation photoluminescence (PL) measurements of an ensemble of InAs/GaAs self-as...
International audienceWe investigate the interband transitions in several ensembles of self-assemble...
We report on high-excitation photoluminescence (PL) measurements of an ensemble of InAs/GaAs self-a...
We investigate the far infrared magneto-optical transitions in self-assembled InAs quantum dots wit...
This thesis presents a study of electrons, holes and excitons confined in self-assembled InAs/GaAs q...
This thesis presents a study of electrons, holes and excitons confined in self-assembled InAs/GaAs q...
A set of self-assembled InAs/GaAs quantum dot (QD) samples annealed at various temperatures for 30 s...
4 páginas, 3 figuras.The magnetoluminescence of InAs/GaAs self-assembled quantum dots (QDs) is studi...
We present the first radiative lifetime measurements and magneto-photoluminescence results of excite...
A set of self-assembled InAs/GaAs quantum dot (QD) samples annealed at various temperatures for 30 ...
We report on the optical properties of single InAs/GaAs quantum dots emitting near the telecommunica...
International audienceResonant photoluminescence experiments performed on self-assembled InAs/GaAs q...
Magneto-photoluminescence of single- and multi-layered self- organised MOCVD grown InAs quantum dot...
We investigate the interband transitions in several ensembles of self-assembled InAs/GaAs quantum do...
We report on the magneto-optical evidence and theoretical modelling of polaron effects in self-asse...
We report on high-excitation photoluminescence (PL) measurements of an ensemble of InAs/GaAs self-as...
International audienceWe investigate the interband transitions in several ensembles of self-assemble...
We report on high-excitation photoluminescence (PL) measurements of an ensemble of InAs/GaAs self-a...
We investigate the far infrared magneto-optical transitions in self-assembled InAs quantum dots wit...
This thesis presents a study of electrons, holes and excitons confined in self-assembled InAs/GaAs q...
This thesis presents a study of electrons, holes and excitons confined in self-assembled InAs/GaAs q...
A set of self-assembled InAs/GaAs quantum dot (QD) samples annealed at various temperatures for 30 s...
4 páginas, 3 figuras.The magnetoluminescence of InAs/GaAs self-assembled quantum dots (QDs) is studi...
We present the first radiative lifetime measurements and magneto-photoluminescence results of excite...
A set of self-assembled InAs/GaAs quantum dot (QD) samples annealed at various temperatures for 30 ...
We report on the optical properties of single InAs/GaAs quantum dots emitting near the telecommunica...