DOIAbstract
We have grown VOx thin films on different substrates in order to investigate the influence of epitaxial strain on the transport properties. We found that the electric conductivity is much larger for films grown under compressive strain on SrTiO3 substrates, as compared to bulk material and VOx films grown under tensile strain on MgO substrates. A clear crossover from metallic to semiconducting behavior is observed when increasing the oxygen content x. Apparently, the application of strain induces a Mott-Hubbard insulator-to-metal transition in VO$_{x<1}$. The VOx/SrTiO3 films show an unexpected large positive magnetoresistance effect at low temperatures, which is not found in the VOx films grown under tensile strain on MgO or on a substrate...
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