We consider the effect of Coulomb interactions on the average density of states (DOS) of disordered low-dimensional metals for temperatures T and frequencies ω smaller than the inverse elastic life-time $1/ \tau_0$. Using the fact that long-range Coulomb interactions in two dimensions (2d) generate in the DOS $\nu ( \omega )$ but only $\ln$-singularities in the conductivity $\sigma ( \omega) $, we can re-sum the most singular contributions to the average DOS via a simple gauge-transformation. If $\lim_{ \omega \rightarrow 0 } \sigma ( \omega ) > 0$, then a metallic Coulomb gap $\nu ( \omega ) \propto | \omega | / e^4$ appears in the DOS at T=0 for frequencies below a certain crossover frequency $\Omega_2$ which depends on t...
The theoretical model of the short-range interacting Luttinger liquid predicts a power-law scaling o...
We consider non-equilibrium transport in disordered conductors. We calculate the interaction correc...
Gd(3-x)vxS4 provides a convenient analog of a compensated semiconductor in which, for x≃0.3, the mob...
We study the effect of electron-electron interaction on the one-particle density of states (DOS) rho...
We compare the rise in resistivity with increasing temperature in the “metallic” regime for a range ...
We study the effect of Coulomb interaction on Anderson localisation in the disordered two-dimensiona...
Transport properties of extremely high purity two-dimensional (2D) electron systems at low temperatu...
Journal ArticleWe calculate the low-energy tunneling density of states v(ε, T) of an N-channel disor...
We study conductance fluctuations in a two-dimensional electron gas as a function of chemical potent...
The interpretation of the metal-insulator transition phenomena in disordered two-dimensional electro...
Electron tunneling measurements of the density of states (DOS) in ultrathin Be films reveal that a c...
Transport properties of extremely high purity two-dimensional (2D) electron systems at low temperat...
We report direct experimental evidence that the insulating phase of a disordered, yet strongly inter...
We analyze an interplay between Coulomb blockade and quantum fluctuations in a coherent conductor (w...
We investigate the influence of electron-electron interactions on the conductance of two-dimensional...
The theoretical model of the short-range interacting Luttinger liquid predicts a power-law scaling o...
We consider non-equilibrium transport in disordered conductors. We calculate the interaction correc...
Gd(3-x)vxS4 provides a convenient analog of a compensated semiconductor in which, for x≃0.3, the mob...
We study the effect of electron-electron interaction on the one-particle density of states (DOS) rho...
We compare the rise in resistivity with increasing temperature in the “metallic” regime for a range ...
We study the effect of Coulomb interaction on Anderson localisation in the disordered two-dimensiona...
Transport properties of extremely high purity two-dimensional (2D) electron systems at low temperatu...
Journal ArticleWe calculate the low-energy tunneling density of states v(ε, T) of an N-channel disor...
We study conductance fluctuations in a two-dimensional electron gas as a function of chemical potent...
The interpretation of the metal-insulator transition phenomena in disordered two-dimensional electro...
Electron tunneling measurements of the density of states (DOS) in ultrathin Be films reveal that a c...
Transport properties of extremely high purity two-dimensional (2D) electron systems at low temperat...
We report direct experimental evidence that the insulating phase of a disordered, yet strongly inter...
We analyze an interplay between Coulomb blockade and quantum fluctuations in a coherent conductor (w...
We investigate the influence of electron-electron interactions on the conductance of two-dimensional...
The theoretical model of the short-range interacting Luttinger liquid predicts a power-law scaling o...
We consider non-equilibrium transport in disordered conductors. We calculate the interaction correc...
Gd(3-x)vxS4 provides a convenient analog of a compensated semiconductor in which, for x≃0.3, the mob...