Low frequency noise in intrinsic low pressure chemical vapour deposited polysilicon resistors

Low-frequency noise measurements were performed on intrinsic low pressure chemical vapor deposited polycrystalline silicon resistors. The current noise exhibits a transition from 1/f to 1/f0.6 behavior with the resistors biased in the linear region. The origin of the noise is related to carrier density fluctuation between conduction band and gap states consisting of deep states lying close to midgap with uniform energy distribution and exponential band tails. From analysis of the experimental data, the quality of the material is characterized with respect to the deposition pressure. When the resistors are biased in the non-linear regime, an additional noise is observed which is attributed to the temperature rise due to Joule-induced heating within the samples