Numerical analysis of electronic conductivity in graphene with resonant adsorbates: comparison of monolayer and Bernal bilayer

We describe the electronic conductivity, as a function of the Fermi energy, in the Bernal bilayer graphene (BLG) in presence of a random distribution of vacancies that simulate resonant adsorbates. We compare it to monolayer (MLG) with the same defect concentrations. These transport properties are related to the values of fundamental length scales such as the elastic mean free path Le, the localization length ξ and the inelastic mean free path Li. Usually the later, which reflect the effect of inelastic scattering by phonons, strongly depends on temperature T. In BLG an additional characteristic distance l1 exists which is the typical traveling distance between two interlayer hopping events. We find that when the concentration of defects is smaller than 1%–2%, one has l1 ≤ Le ≪ ξ and the BLG has transport properties that differ from those of the MLG independently of Li(T). Whereas for larger concentration of defects Le