CNPQ - CONSELHO NACIONAL DE DESENVOLVIMENTO CIENTÍFICO E TECNOLÓGICOFAPESP - FUNDAÇÃO DE AMPARO À PESQUISA DO ESTADO DE SÃO PAULOWe report on a detailed study of the intensity dependent optical properties of individual GaN/AlN quantum disks (QDisks) embedded into GaN nanowires (NW). The structural and optical properties of the QDisks were probed by high spatial resolution cathodoluminescence (CL) in a scanning transmission electron microscope (STEM). By exciting the QDisks with a nanometric electron beam at currents spanning over three orders of magnitude, strong nonlinearities (energy shifts) in the light emission are observed. In particular, we find that the amount of energy shift depends on the emission rate and on the QDisk morphology (...
Time-integrated and time-resolved microphotoluminescence studies were carried out on Inx Ga1-x N qua...
Time-integrated and time-resolved microphotoluminescence studies were carried out on In xGa 1-xN qua...
Several of the key issues of planar (Al,Ga)N-based deep-ultraviolet light-emitting diodes could pote...
21 pages, 11 figures, published in PRBInternational audienceWe report on a detailed study of the int...
21 pages, 11 figures, published in PRBInternational audienceWe report on a detailed study of the int...
21 pages, 11 figures, published in PRBInternational audienceWe report on a detailed study of the int...
21 pages, 11 figures, published in PRBInternational audienceWe report on a detailed study of the int...
21 pages, 11 figures, published in PRBInternational audienceWe report on a detailed study of the int...
International audienceWe report the spectral imaging in the UV to visible range with nanometer scale...
International audienceWe report the spectral imaging in the UV to visible range with nanometer scale...
International audienceWe report the spectral imaging in the UV to visible range with nanometer scale...
bS Supporting Information ABSTRACT: We report the spectral imaging in the UV to visible range with n...
International audienceWe report the spectral imaging in the UV to visible range with nanometer scale...
We report on electrostatic screening of polarization-induced internal electric fields in AlN/GaN nan...
Time-integrated and time-resolved microphotoluminescence studies were carried out on Inx Ga1-x N qua...
Time-integrated and time-resolved microphotoluminescence studies were carried out on Inx Ga1-x N qua...
Time-integrated and time-resolved microphotoluminescence studies were carried out on In xGa 1-xN qua...
Several of the key issues of planar (Al,Ga)N-based deep-ultraviolet light-emitting diodes could pote...
21 pages, 11 figures, published in PRBInternational audienceWe report on a detailed study of the int...
21 pages, 11 figures, published in PRBInternational audienceWe report on a detailed study of the int...
21 pages, 11 figures, published in PRBInternational audienceWe report on a detailed study of the int...
21 pages, 11 figures, published in PRBInternational audienceWe report on a detailed study of the int...
21 pages, 11 figures, published in PRBInternational audienceWe report on a detailed study of the int...
International audienceWe report the spectral imaging in the UV to visible range with nanometer scale...
International audienceWe report the spectral imaging in the UV to visible range with nanometer scale...
International audienceWe report the spectral imaging in the UV to visible range with nanometer scale...
bS Supporting Information ABSTRACT: We report the spectral imaging in the UV to visible range with n...
International audienceWe report the spectral imaging in the UV to visible range with nanometer scale...
We report on electrostatic screening of polarization-induced internal electric fields in AlN/GaN nan...
Time-integrated and time-resolved microphotoluminescence studies were carried out on Inx Ga1-x N qua...
Time-integrated and time-resolved microphotoluminescence studies were carried out on Inx Ga1-x N qua...
Time-integrated and time-resolved microphotoluminescence studies were carried out on In xGa 1-xN qua...
Several of the key issues of planar (Al,Ga)N-based deep-ultraviolet light-emitting diodes could pote...