A new application of a circuit simulation program (SPICE) is presented. The static behaviour of a complex bipolar device (COMFET or IGT) is analysed from an equivalent circuit including the physical components of the real device. It is possible to infer about technological parameters to improve the working of the IGT.Une nouvelle application d'un programme de simulation de circuits (SPICE) est présentée ci-dessous. Le comportement statique d'un composant bipolaire complexe (IGT) est analysé à partir d'un circuit équivalent faisant apparaître les paramètres physiques du dispositif réel. Cette analyse permet de modifier les paramètres technologiques afin d'améliorer le fonctionnement du transistor à grille isolée (IGT)
The software support for simulation of electrical circuits has been developed for more than sixty ye...
A practical model for a single-electron transistor (SET) was developed based on the physical phenome...
The impact of etching-induced variations of the gate geometry on the electrical performance of MOSFE...
A new application of a circuit simulation program (SPICE) is presented. The static behaviour of a co...
Each year semiconductor manufacturers spend millions of dollars in the development of new products. ...
This paper proposes a technique to build SPICE micromodels of integrated circuits in bipolar technol...
The general purpose circuit simulation package SPICE is used as a design tool for power electronic c...
Each year semiconductor manufacturers spend millions of dollars in the development of new products. ...
The design and verification of a electronic circuit requires much expertise and intelligent tools an...
A simplified IGBT (Insulated Gate Bipolar Transistor) SPICE macromodel, based on its equivalent circ...
A new equivalent circuit model for insulated gate bipolar transistor is presented. It takes into acc...
A new equivalent circuit model for insulated gate bipolar transistor is presented. It takes into acc...
This paper presents a universal SPICE model for field-effect transistors, which is independent from ...
The implementation of TCAD process and device simulators as well as SPICE modeling and simulation of...
This paper describes the methodology associated with the practical implementation, in SPICE circuit ...
The software support for simulation of electrical circuits has been developed for more than sixty ye...
A practical model for a single-electron transistor (SET) was developed based on the physical phenome...
The impact of etching-induced variations of the gate geometry on the electrical performance of MOSFE...
A new application of a circuit simulation program (SPICE) is presented. The static behaviour of a co...
Each year semiconductor manufacturers spend millions of dollars in the development of new products. ...
This paper proposes a technique to build SPICE micromodels of integrated circuits in bipolar technol...
The general purpose circuit simulation package SPICE is used as a design tool for power electronic c...
Each year semiconductor manufacturers spend millions of dollars in the development of new products. ...
The design and verification of a electronic circuit requires much expertise and intelligent tools an...
A simplified IGBT (Insulated Gate Bipolar Transistor) SPICE macromodel, based on its equivalent circ...
A new equivalent circuit model for insulated gate bipolar transistor is presented. It takes into acc...
A new equivalent circuit model for insulated gate bipolar transistor is presented. It takes into acc...
This paper presents a universal SPICE model for field-effect transistors, which is independent from ...
The implementation of TCAD process and device simulators as well as SPICE modeling and simulation of...
This paper describes the methodology associated with the practical implementation, in SPICE circuit ...
The software support for simulation of electrical circuits has been developed for more than sixty ye...
A practical model for a single-electron transistor (SET) was developed based on the physical phenome...
The impact of etching-induced variations of the gate geometry on the electrical performance of MOSFE...